Search Results
Evidence of two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn
The kagome lattice has long been regarded as a theoretical framework that connects lattice geometry to unusual singularities in electronic structure. Transition metal kagome compounds have been recently identified as a promising material platform to investigate the long-sought electronic flat band. Here we report the signature of a two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn by means of planar tunneling spectroscopy. Employing a Schottky heterointerface of FeSn and an n-type semiconductor Nb-doped SrTiO3, we observe an anomalous enhancement in tunneling conductance within a finite energy range of FeSn. Our first-principles calculations show this is consistent with a spin-polarized flat band localized at the ferromagnetic kagome layer at the Schottky interface. The spectroscopic capability to characterize the electronic structure of a kagome compound at a thin film heterointerface will provide a unique opportunity to probe flat band induced phenomena in an energy-resolved fashion with simultaneous electrical tuning of its properties. Furthermore, the exotic surface state discussed herein is expected to manifest as peculiar spin-orbit torque signals in heterostructure-based spintronic devices.
Transport Properties and Finite Size Effects in β-Ga2O3 Thin Films
Thin films of the wide band gap semiconductor β-Ga2O3 have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on fundamental limits of transport properties in thin films. The conductivities, Hall densities and mobilities in thin homoepitaxially MOVPE grown (100)-orientated β-Ga2O3 films were measured as a function of temperature and film thickness. At room temperature, the electron mobilities ((115 ± 10) cm2/Vs) in thicker films (>150 nm) are comparable to the best of bulk. However, the mobility is strongly reduced by more than two orders of magnitude with decreasing film thickness ((5.5 ± 0.5) cm2/Vs for a 28 nm thin film). We find that the commonly applied classical Fuchs-Sondheimer model does not explain sufficiently the contribution of electron scattering at the film surfaces. Instead, by applying an electron wave model by Bergmann, a contribution to the mobility suppression due to the large de Broglie wavelength in β-Ga2O3 is proposed as a limiting quantum mechanical size effect.
Intertwined electronic and magnetic structure of the van-der-Waals antiferromagnet Fe2P2S6
Many unusual and promising properties have been reported recently for the transition metal trichalcogenides of the type MPS3 (M = V, Mn, Fe, Ni..), such as maintaining magnetic order to the atomically thin limit, ultra-sharp many-body excitons, metal-insulator transitions and, especially for Fe2P2S6, giant linear dichroism among others. Here we conduct a detailed investigation of the electronic structure of Fe2P2S6 using angle-resolved photoemission spectroscopy, q-dependent electron energy loss spectroscopy, optical spectroscopies and density functional theory. Fe2P2S6 is a Mott insulator with a gap of E gap ≈ 1.4 eV and zigzag antiferromagnetism below T N = 119 K. The low energy excitations are dominated by Fe 3d states. Large and sign-changing linear dichroism is observed. We provide a microscopic mechanism explaining key properties of the linear dichroism based on the correlated character of the electronic structure, thereby elucidating the nature of the spin-charge coupling in Fe2P2S6 and related materials.
New magneto-polaron resonances in a monolayer of a transition metal dichalcogenide
Transition metal dichalcogenide (TMD) semiconductors are two-dimensional materials with great potential for the future of nano-optics and nano-optoelectronics as well as the rich and exciting development of basic research. The influence of an external magnetic field on a TMD monolayer raises a new question: to unveil the behavior of the magneto-polaron resonances (MPRs) associated with the phonon symmetry inherent in the system. It is shown that the renormalized Landau energy levels are modified by the interplay of the long-range Pekar–Fröhlich (PF) and short-range deformation potential (DP) interactions. This leads to a new series of MPRs involving the optical phonons at the center of the Brillouin zone. The coupling of the two Landau levels with the LO and A1 optical phonon modes provokes resonant splittings of double avoided-crossing levels giving rise to three excitation branches. This effect appears as bigger energy gaps at the anticrossing points in the renormalized Landau levels. To explore the interplay between the MPRs, the electron-phonon interactions (PF and DP) and the couplings between adjacent Landau levels, a full Green’s function treatment for the evaluation of the energy and its life-time broadening is developed. A generalization of the two-level approach is performed for the description of the new MPR branches. The obtained results are a guideline for the magneto-optical experiments in TMDs, where three MPR peaks should be observable.
Valence-state reflectometry of complex oxide heterointerfaces
Emergent phenomena in transition-metal-oxide heterostructures such as interface superconductivity and magnetism have been attributed to electronic reconstruction, which, however, is difficult to detect and characterise. Here we overcome the associated difficulties to simultaneously address the electronic degrees of freedom and distinguish interface from bulk effects by implementing a novel approach to resonant X-ray reflectivity (RXR). Our RXR study of the chemical and valance profiles along the polar (001) direction of a LaCoO3 film on NdGaO3 reveals a pronounced valence-state reconstruction from Co3+ in the bulk to Co2+ at the surface, with an areal density close to 0.5 Co2+ ions per unit cell. An identical film capped with polar (001) LaAlO3 maintains the Co3+ valence over its entire thickness. We interpret this as evidence for electronic reconstruction in the uncapped film, involving the transfer of 0.5e− per unit cell to the subsurface CoO2 layer at its LaO-terminated polar surface.