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    Novel concept for VCSEL enhanced silicon photonic coherent transceiver
    (New York, NY : American Inst. of Physics, 2019) Seiler, Pascal M.; Ronniger, Gregor; Troppenz, Ute; Sigmund, Ariane; Moehrle, Martin; Peczek, Anna; Zimmermann, Lars
    We present a novel concept for an integrated silicon photonic coherent transceiver using vertical-emitting laser sources at 1550 nm. In a state of the art external modulation configuration, we deploy a VCSEL on the transmit and a HCSEL on the receive side. We demonstrate the feasibility of this approach by externally modulating the VCSEL with QPSK at up to 28 Gbaud. We also perform experiments with the VCSEL-HCSEL configuration in a slave-master optical injection locking setup for future data center interconnects. The results show stable locking conditions and the VCSEL is detuned to perform predominant phase modulation. To the best of our knowledge, this is the first time direct phase modulation of a VCSEL under optical injection locking was demonstrated using two vertically emitting laser sources as master - and slave laser. © 2019 Author(s).
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    Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity
    (Washington, DC : Soc., 2022) Vissers, Ewoud; Poelman, Stijn; Wenzel, Hans; Christopher, Heike; Van Gasse, Kasper; Knigge, Andrea; Kuyken, Bart
    External cavity mode-locked lasers could be used as comb sources for high volume application such as LIDAR and dual comb spectroscopy. Currently demonstrated chip scale integrated mode-locked lasers all operate in the C-band. In this paper, a hybrid-integrated external cavity mode-locked laser working at 1064 nm is demonstrated, a wavelength beneficial for optical coherence tomography or Raman spectroscopy applications. Additionally, optical injection locking is demonstrated, showing an improvement in the optical linewidth, and an increased stability of the comb spectrum.