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Type: Text × Subject: Thin-films ×

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Now showing 1 - 4 of 4
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    Optical and chemical control of the wettability of nanoporous photoswitchable films
    (Cambridge : Royal Society of Chemistry, 2022) Zhang, Zejun; Chen, Donghui; Mutruc, Dragos; Hecht, Stefan; Heinke, Lars
    Wettability is a central surface property of functional thin films. Here, we present a nanoporous film made of an azobenzene-containing metal-organic framework material where the wettability is controlled by photoswitching of the fluorinated azobenzene moieties and by reversible incorporation of guest molecules with different polarities in the pores. Using both, the optical and the chemical stimuli, the water contact angle was modified over a wide range, from 23° to 97°.
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    Influence of chemical interactions on the electronic properties of BiOI/organic semiconductor heterojunctions for application in solution-processed electronics
    (London [u.a.] : RSC, 2023) Lapalikar, Vaidehi; Dacha, Preetam; Hambsch, Mike; Hofstetter, Yvonne J.; Vaynzof, Yana; Mannsfeld, Stefan C. B.; Ruck, Michael
    Bismuth oxide iodide (BiOI) has been viewed as a suitable environmentally-friendly alternative to lead-halide perovskites for low-cost (opto-)electronic applications such as photodetectors, phototransistors and sensors. To enable its incorporation in these devices in a convenient, scalable, and economical way, BiOI thin films were investigated as part of heterojunctions with various p-type organic semiconductors (OSCs) and tested in a field-effect transistor (FET) configuration. The hybrid heterojunctions, which combine the respective functionalities of BiOI and the OSCs were processed from solution under ambient atmosphere. The characteristics of each of these hybrid systems were correlated with the physical and chemical properties of the respective materials using a concept based on heteropolar chemical interactions at the interface. Systems suitable for application in lateral transport devices were identified and it was demonstrated how materials in the hybrids interact to provide improved and synergistic properties. These indentified heterojunction FETs are a first instance of successful incorporation of solution-processed BiOI thin films in a three-terminal device. They show a significant threshold voltage shift and retained carrier mobility compared to pristine OSC devices and open up possibilities for future optoelectronic applications.
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    Perspectives on MOVPE-grown (100) β-Ga2O3thin films and its Al-alloy for power electronics application
    ([Melville, NY] : American Institute of Physics, 2022) Rehm, Jana; Chou, Ta-Shun; Bin Anooz, Saud; Seyidov, Palvan; Fiedler, Andreas; Galazka, Zbigniew; Popp, Andreas
    Beta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency electronics, and solar-blind ultraviolet radiation detectors. Here, we present an overview and perspective on the development of MOVPE-grown (100) β-Ga2O3 thin films and its role in supplementing high-power electronics. We review the development path of the growth process on (100) β-Ga2O3 thin films with a discussion regarding the solved and remaining challenges. The structural defect formation mechanism, substrate treatment strategies, and different growth windows are analyzed to optimize the grown film to fulfill the requirements for device fabrication. Toward industrial applications, MOVPE-grown β-Ga2O3 thin films are evaluated in two aspects: thick layers with smooth surface roughness and the electrical properties in terms of high carrier mobility and low doping concentration. Based on the reviewed results, we propose strategies in substrate preparation treatments and supportive tools such as the machine learning approaches for future growth process optimization and envision the rising interest of the β-Ga2O3-related alloy, β-(AlxGa1-x)2O3.
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    Encapsulation of locally welded silver nanowire with water-free ALD-SbOx for flexible thin-film transistors
    (Melville, NY : American Inst. of Physics, 2022) Yang, Jun; Bahrami, Amin; Ding, Xingwei; Lehmann, Sebastian; Nielsch, Kornelius
    Transparent conductive electrodes are essential in the application of flexible electronics. In this work, we successfully demonstrated a novel strategy for improving mechanical/electrical properties of indium tin oxide (ITO)-free flexible silver nanowire (Ag NW) thin films. To reduce the contact resistance of Ag NWs, an ethanol-mist was used to weld the cross junction of wires at room temperature. The nano-welded Ag NWs (W-Ag NWs) were then coated with an aluminum-doped ZnO (AZO) solution, which significantly reduce the roughness of the Ag NW thin film. Finally, an ultrathin SbOx thin film of 2 nm was deposited on the film surface using a water-free low-temperature atomic layer deposition technique to protect the W-Ag NW/AZO layer from water or oxygen degradation. The treated Ag NWs have a high transmittance of 87% and a low sheet resistance of about 15 ω/sq, which is comparable with the ITO electrode's property. After 1000 cycles of bending testing, the W-Ag NW/AZO/SbOx film practically retains its initial conductivity. Furthermore, the samples were immersed in a solution with pH values ranging from 3 to 13 for 5 min. When compared to untreated Ag NWs or those coated with AlOx thin films, W-Ag NW/AZO/SbOx had superior electrical stability. The W-Ag NW/AZO/SbOxlayer was integrated as a gate electrode on low-power operating flexible Ti-ZnO thin film transistors (TFTs). The 5% Ti-ZnO TFT has a field-effect mobility of 19.7 cm2 V s-1, an Ion/Ioff ratio of 107, and a subthreshold swing of 147 mV decade-1.