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    Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology
    (Weinheim : Wiley-VCH, 2019) Sammak, Amir; Sabbagh, Diego; Hendrickx, Nico W.; Lodari, Mario; Wuetz, Brian Paquelet; Tosato, Alberto; Yeoh, LaReine; Bollani, Monica; Virgilio, Michele; Schubert, Markus Andreas; Zaumseil, Peter; Capellini, Giovanni; Veldhorst, Menno; Scappucci, Giordano
    Buried-channel semiconductor heterostructures are an archetype material platform for the fabrication of gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface; however, nearby surface states degrade the electrical properties of the starting material. Here, a 2D hole gas of high mobility (5 × 10 5 cm 2 V −1 s −1 ) is demonstrated in a very shallow strained germanium (Ge) channel, which is located only 22 nm below the surface. The top-gate of a dopant-less field effect transistor controls the channel carrier density confined in an undoped Ge/SiGe heterostructure with reduced background contamination, sharp interfaces, and high uniformity. The high mobility leads to mean free paths ≈ 6 µm, setting new benchmarks for holes in shallow field effect transistors. The high mobility, along with a percolation density of 1.2 × 10 11 cm −2 , light effective mass (0.09m e ), and high effective g-factor (up to 9.2) highlight the potential of undoped Ge/SiGe as a low-disorder material platform for hybrid quantum technologies. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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    In Situ Observation Reveals Local Detachment Mechanisms and Suction Effects in Micropatterned Adhesives
    (Weinheim : Wiley-VCH, 2019) Tinnemann, Verena; Hernández, Luissé; Fischer, Sarah C.L.; Arzt, Eduard; Bennewitz, Roland; Hensel, René
    Fibrillar adhesion pads of insects and geckoes have inspired the design of high-performance adhesives enabling a new generation of handling devices. Despite much progress over the last decade, the current understanding of these adhesives is limited to single contact pillars and the behavior of whole arrays is largely unexplored. In the study reported here, a novel approach is taken to gain insight into the detachment mechanisms of whole micropatterned arrays. Individual contacts are imaged by frustrated total internal reflection, allowing in situ observation of contact formation and separation during adhesion tests. The detachment of arrays is found to be governed by the distributed adhesion strength of individual pillars, but no collaborative effect mediated by elastic interactions can be detected. At the maximal force, about 30% of the mushroom structures are already detached. The adhesive forces decrease with reduced air pressure by 20% for the smooth and by 6% for the rough specimen. These contributions are attributed to a suction effect, whose strength depends critically on interfacial defects controlling the sealing quality of the contact. This dominates the detachment process and the resulting adhesion strength. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim