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    Carrier Lifetime in Liquid-phase Crystallized Silicon on Glass
    (Amsterdam [u.a.] : Elsevier, 2016) Vetter, Michael; Gawlik, Annett; Plentz, Jonathan; Andrä, Gudrun; Ribeyron, Pierre-Jean; Cuevas, Andres; Weeber, Arthur; Ballif, Christophe; Glunz, Stefan; Poortmans, Jef; Brendel, Rolf; Aberle, Armin; Sinton, Ron; Verlinden, Pierre; Hahn, Giso
    Liquid-phase crystallized silicon on glass (LPCSG) presents a promising material to fabricate high quality silicon thin films, e.g. for solar cells and modules. Barrier layers and a doped amorphous silicon layer are deposited on the glass substrate followed by crystallization with a line focus laser beam. In this paper we introduce injection level dependent lifetime measurements generated by the quasi steady-state photoconductance decay method (QSSPC) to characterize LPCSG absorbers. This contactless method allows a determination of the LPCSG absorber quality already at an early stage of solar cell fabrication, and provides a monitoring of the absorber quality during the solar cell fabrication steps. We found minority carrier lifetimes higher than 200ns in our layers (e.g. n-type absorber with ND=2x1015cm-3) indicating a surface recombination velocity SBL<3000cm/s at the barrier layer/Si interface.