2018, Kayser, S., Lüdge, A., Böttcher, K.

The major task for the Lateral-Photovoltage-Scanning-Method is to detect doping striations and the shape of the solid-liquid-interface of an indirect semiconductor crystal. This method is sensitive to the gradient of the charge carrier density. Attempting to simulate the signal generation of the LPS-Method, we are using a three dimensional Finite Volume approach for solving the van Roosbroeck equations with COMSOL Multiphysics in a silicon sample. We show that the simulated LPS-voltage is directly proportional to the gradient of a given doping distribution, which is also the case for the measured LPS-voltage.

2018, Zhukavin, R.Kh., Kovalevsky, K.A., Tsyplenkov, V.V., Pavlov, S.G., Hübers, H-W., Choporova, Yu.Yu., Knyazev, B.A., Klopf, J.M., Redlich, B., Abrosimov, N.V., Astrov, Yu.A., Shastin, V.N., Silaev, A.A.

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