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Now showing 1 - 10 of 15
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    Ultrathin gold nanowires for transparent electronics: breaking barriers
    (Amsterdam : Elsevier, 2016) Gonzalez-Garcia, Lola; Maurer, Johannes H.M.; Reiser, Beate; Kanelidis, Ioannis; Kraus, Tobias
    Novel types of Transparent Conductive Materials (TCMs) based on metal nanostructures are discussed. Dispersed metal nanoparticles can be deposited from liquids with moderate thermal budgets to form conductive films that are suitable for thin-film solar cells, displays, touch screens, and nanoelectronics. We aim at new TCMs that combine high electrical conductivity with optical transparency and mechanical flexibility. Wet-processed films of randomly arranged metallic nanowires networks are commercially established and provide a relatively cost-effective, scalable production. Ultrathin gold nanowires (AuNWs) with diameters below 2 nm and high aspect ratios have recently become available. They combine mechanical flexibility, high optical transparency, and chemical inertness. AuNWs carry oleylamine capping ligands from synthesis that cause high contact resistances at their junctions. We investigated different annealing processes based on temperature and plasma treatment, to remove the ligands after deposition and to allow electrical conductivity. Their effect on the resulting nanostructure and on the material properties was studied. Scanning Electron Microscopy (SEM) and optical spectroscopy revealed changes in the microstructure for the different post-treatments. We found that the conductivity and the stability of the TCM depended strongly on its final microstructure. We demonstrate that the best results are obtained using H2-plasma treatment.
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    A PDF Test-Set for Well-Formedness Validation in JHOVE - The Good, the Bad and the Ugly
    (Zenodo, 2017) Lindlar, Michelle; Tunnat, Yvonne; Wilson, Carl
    Digital preservation and active software stewardship are both cyclical processes. While digital preservation strategies have to be reevaluated regularly to ensure that they still meet technological and organizational requirements, software needs to be tested with every new release to ensure that it functions correctly. JHOVE is an open source format validation tool which plays a central role in many digital preservation workflows and the PDF module is one of its most important features. Unlike tools such as Adobe PreFlight or veraPDF which check against requirements at profile level, JHOVE’s PDF-module is the only tool that can validate the syntax and structure of PDF files. Despite JHOVE’s widespread and long-standing adoption, the underlying validation rules are not formally or thoroughly tested, leading to bugs going undetected for a long time. Furthermore, there is no ground-truth data set which can be used to understand and test PDF validation at the structural level. The authors present a corpus of light-weight files designed to test the validation criteria of JHOVE’s PDF module against “well-formedness”. We conclude by measuring the code coverage of the test corpus within JHOVE PDF validation and by feeding detected inconsistencies of the PDF-module back into the open source development process.
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    Selective lateral germanium growth for local GeOI fabrication
    (Pennington, NJ : ECS, 2014) Yamamoto, Yuji; Schubert, Markus Andreas; Reich, Christian; Bernd Tillack, Bernd Tillack
    High quality local Germanium-on-oxide (GeOI) wafers are fabricated using selective lateral germanium (Ge) growth technique by a single wafer reduced pressure chemical vapor deposition system. Mesa structures of 300 nm thick epitaxial silicon (Si) interposed by SiO2 cap and buried oxide are prepared. HCl vapor phase etching of Si is performed prior to selective Ge growth to remove a part of the epitaxial Si to form cavity under the mesa. By following selective Ge growth, the cavity was filled. Cross section TEM shows dislocations of Ge which are located near Si / Ge interface only. By plan view TEM, it is shown that the dislocations in Ge which direct to SiO2 cap or to buried-oxide (BOX) are located near the interface of Si and Ge. The dislocations which run parallel to BOX are observed only in [110] and [1–10] direction resulting Ge grown toward [010] direction contains no dislocations. This mechanism is similar to aspect-ratio-trapping but here we are using a horizontal approach, which offers the option to remove the defective areas by standard structuring techniques. A root mean square of roughness of ∼0.2 nm is obtained after the SiO2 cap removal. Tensile strain in the Ge layer is observed due to higher thermal expansion coefficient of Ge compared to Si and SiO2.
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    Functional access to electronic media collections using emulation-as-a-service
    (2014) Bähr, Thomas; Lindlar, Michelle; Rechert, Klaus; Liebetraut, Thomas
    Over the last 30 years the German National Library of Science and Technology (TIB) accumulated a large collection of various electronic media, such as floppies or CD-ROMs. This poster describes both practical workflows as well as technical infrastructure to provide authentic and interactive access to the TIB’s large electronic media collection.
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    Microstructure evolution during annealing of an SPD- processed supersaturated Cu – 3 at.% Ag alloy
    (Bristol : IOP Publishing, 2014) Gubicza, J.; Hegedűs, Z.; Lábár, J.L.; Sarma, V.S.; Kauffmann, A.; Freudenberger, J.
    Supersaturated Cu-3 at.% Ag alloy was processed by rolling at liquid nitrogen temperature and subsequent annealing at 623 K up to 20 min. It was found that after annealing, an inhomogeneous solute atom distribution developed, since the Ag particles with small size and/or large specific interfacial energy were dissolved due to the Gibbs-Thomson effect. In the region where the solute concentration increased, a high dislocation density was retained in the Cu matrix even after annealing, while in the region where the Ag solute content did not increase, the dislocation density decreased by more than one order of magnitude. Therefore, in the cryorolled and annealed samples, heterogeneous microstructures were developed where both the dislocation density and the solute concentration varied considerably.
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    Chirality selection in the vortex state of magnetic nanodisks with a screw dislocation
    (Les Ulis : EDP Sciences, 2014) Butenko, A.B.; Rößler, U.K.
    Structural defects in magnetic crystalline materials may locally change magnetic properties and can significantly influence the behavior of magnetic nanostructures. E.g., surface-induced Dzyaloshinskii-Moriya interactions can strongly affect vortex structures in magnetic nanodisks causing a chirality selection. Near lattice defects, the spin-orbit interactions induce local antisymmetric Dzyaloshinskii-Moriya exchange and cause effective anisotropies, which can result in spin canting. Broken inversion symmetry near a defect leads to locally chiral exchange. We present a phenomenological approach for dislocation-induced Dzyaloshinskii-Moriya couplings. As an example we investigate effects of a screw dislocation at the center of a magnetic nanodisk with a vortex state. By numerical calculations on vortex profiles we analyze equilibrium parameters of the vortex as functions of applied magnetic field and the material and geometrical parameters. It is proposed that magnetic nanodisks with defects provide a suitable experimental setting to study induced chirality by spin-orbit effects.
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    Building information modeling – A game changer for interoperability and a chance for digital preservation of architectural data?
    (2014) Lindlar, Michelle
    Digital data associated with the architectural design-andconstruction process is an essential resource alongside -and even past- the lifecycle of the construction object it describes. Despite this, digital architectural data remains to be largely neglected in digital preservation research – and vice versa, digital preservation is so far neglected in the design-and-construction process. In the last 5 years, Building Information Modeling (BIM) has seen a growing adoption in the architecture and construction domains, marking a large step towards much needed interoperability. The open standard IFC (Industry Foundation Classes) is one way in which data is exchanged in BIM processes. This paper presents a first digital preservation based look at BIM processes, highlighting the history and adoption of the methods as well as the open file format standard IFC (Industry Foundation Classes) as one way to store and preserve BIM data.
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    The ties that bind - On the impact of losing a consortium member in a cooperatively operated digital preservation system
    (2016) Lindlar, Michelle
    Cooperatively operated digital preservation systems offer institutions of varying size the chance to actively participate in digital preservation. In current times of budget cuts they are also a valuable asset to larger memory institutions. While the benefits of cooperatively operated systems have been discussed before, the risks associated with a consortial solution have not been analyzed in detail. TIB hosts the Goportis Digital Archive which is used by two large national subject libraries as well as by TIB itself. As the host of this comparatively small preservation network, TIB has started to analyze the particular risk which losing a consortium member poses to the overall system operation. This paper presents the current status of this work-in-progress and highlights two areas: risk factors associated with cost and risk factors associated with the content. While the paper is strictly written from the viewpoint of the consortial leader/ host of this specific network, the underlying processes shall be beneficial to other cooperatively operated digital preservation systems.
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    Dislocation generation and propagation during flash lamp annealing
    (Pennington, NJ : ECS, 2015) Kissinger, G.; Kot, D.; Schubert, M.A.; Sattler, A.
    Dislocation generation and propagation during flash lamp annealing for 20 ms was investigated using wafers with sawed, ground, and etched surfaces. Due to the thermal stress resulting from the temperature profiles generated by the flash pre-existing dislocations propagate into the wafer from both surfaces during flash lamp annealing. A dislocation free zone was observed around 700 μm depth below the surface of a 900 μm thick sawed wafer. The dislocation propagation can be well described by a three-dimensional mechanical model. It was further demonstrated that in wafers being initially free of dislocations no dislocations are generated during flash lamp annealing.