5 results
Search Results
Now showing 1 - 5 of 5
- ItemGeometric models for isotropic random porous media: A review(London : Hindawi, 2014) Hermann, Helmut; Elsner, AntjeModels for random porous media are considered. The models are isotropic both from the local and the macroscopic point of view; that is, the pores have spherical shape or their surface shows piecewise spherical curvature, and there is no macroscopic gradient of any geometrical feature. Both closed-pore and open-pore systems are discussed. The Poisson grain model, the model of hard spheres packing, and the penetrable sphere model are used; variable size distribution of the pores is included. A parameter is introduced which controls the degree of open-porosity. Besides systems built up by a single solid phase, models for porous media with the internal surface coated by a second phase are treated. Volume fraction, surface area, and correlation functions are given explicitly where applicable; otherwise numerical methods for determination are described. Effective medium theory is applied to calculate physical properties for the models such as isotropic elastic moduli, thermal and electrical conductivity, and static dielectric constant. The methods presented are exemplified by applications: small-angle scattering of systems showing fractal-like behavior in limited ranges of linear dimension, optimization of nanoporous insulating materials, and improvement of properties of open-pore systems by atomic layer deposition of a second phase on the internal surface.
- ItemInN nanowires: Growth and optoelectronic properties(Basel : MDPI AG, 2012) Calarco, R.An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.
- ItemPhase transition and anomalous low temperature ferromagnetic phase in Pr 0.6Sr 0.4MnO 3 single crystals(New York, NY : Springer Science + Business Media B.V., 2009) Rößler, S.; Harikrishnan, S.; Naveen Kumar, C.M.; Bhat, H.L.; Elizabeth, S.; Rößler, U.K.; Steglich, F.; Wirth, S.We report on the magnetic and electrical properties of Pr 0.6Sr 0.4MnO 3 single crystals. This compound undergoes a continuous paramagnetic-ferromagnetic transition with a Curie temperature T C301 K and a first-order structural transition at T S64 K. At T S, the magnetic susceptibility exhibits an abrupt jump, and a corresponding small hump is seen in the resistivity. The critical behavior of the static magnetization and the temperature dependence of the resistivity are consistent with the behavior expected for a nearly isotropic ferromagnet with short-range exchange belonging to the Heisenberg universality class. The magnetization (M-H) curves below T S are anomalous in that the virgin curve lies outside the subsequent M-H loops. The hysteretic structural transition at T S as well as the irreversible magnetization processes below T S can be explained by phase separation between a high-temperature orthorhombic and a low-temperature monoclinic ferromagnetic phase.
- ItemOn the electronic properties of a single dislocation(College Park : American Institute of Physics Inc., 2014) Reiche, M.; Kittler, M.; Erfurth, W.; Pippel, E.; Sklarek, K.; Blumtritt, H.; Haehnel, A.; Uebensee, H.A detailed knowledge of the electronic properties of individual dislocations is necessary for next generation nanodevices. Dislocations are fundamental crystal defects controlling the growth of different nanostructures (nanowires) or appear during device processing. We present a method to record electric properties of single dislocations in thin silicon layers. Results of measurements on single screw dislocations are shown for the first time. Assuming a cross-section area of the dislocation core of about 1 nm2, the current density through a single dislocation is J = 3.8 × 1012 A/cm2 corresponding to a resistivity of ρ ≅ 1 × 10-8 Ω cm. This is about eight orders of magnitude lower than the surrounding silicon matrix. The reason of the supermetallic behavior is the high strain in the cores of the dissociated dislocations modifying the local band structure resulting in high conductive carrier channels along defect cores.
- ItemDynamics of indirect exciton transport by moving acoustic fields(Bristol : IOP, 2014) Violante, A.; Cohen, K.; Lazić, S.; Hey, R.; Rapaport, R.; Santos, P.V.We report on the modulation of indirect excitons (IXs) as well as their transport by moving periodic potentials produced by surface acoustic waves (SAWs). The potential modulation induced by the SAW strain modifies both the band gap and the electrostatic field in the quantum wells confining the IXs, leading to changes in their energy. In addition, this potential captures and transports IXs over several hundreds of μm. While the IX packets keep to a great extent their spatial shape during transport by the moving potential, the effective transport velocity is lower than the SAW group velocity and increases with the SAW amplitude. This behavior is attributed to the capture of IXs by traps along the transport path, thereby increasing the IX transit time. The experimental results are well-reproduced by an analytical model for the interaction between trapping centers and IXs during transport.