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Version: publishedVersion × Subject: dislocation ×

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    Lower nanometer-scale size limit for the deformation of a metallic glass by shear transformations revealed by quantitative AFM indentation
    (Frankfurt am Main : Beilstein-Institut, 2015) Caron, Arnaud; Bennewitz, Roland
    We combine non-contact atomic force microscopy (AFM) imaging and AFM indentation in ultra-high vacuum to quantitatively and reproducibly determine the hardness and deformation mechanisms of Pt(111) and a Pt57.5Cu14.7Ni5.3P22.5 metallic glass with unprecedented spatial resolution. Our results on plastic deformation mechanisms of crystalline Pt(111) are consistent with the discrete mechanisms established for larger scales: Plasticity is mediated by dislocation gliding and no rate dependence is observed. For the metallic glass we have discovered that plastic deformation at the nanometer scale is not discrete but continuous and localized around the indenter, and does not exhibit rate dependence. This contrasts with the observation of serrated, rate-dependent flow of metallic glasses at larger scales. Our results reveal a lower size limit for metallic glasses below which shear transformation mechanisms are not activated by indentation. In the case of metallic glass, we conclude that the energy stored in the stressed volume during nanometer-scale indentation is insufficient to account for the interfacial energy of a shear band in the glassy matrix.
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    Dislocation generation and propagation during flash lamp annealing
    (Pennington, NJ : ECS, 2015) Kissinger, G.; Kot, D.; Schubert, M.A.; Sattler, A.
    Dislocation generation and propagation during flash lamp annealing for 20 ms was investigated using wafers with sawed, ground, and etched surfaces. Due to the thermal stress resulting from the temperature profiles generated by the flash pre-existing dislocations propagate into the wafer from both surfaces during flash lamp annealing. A dislocation free zone was observed around 700 μm depth below the surface of a 900 μm thick sawed wafer. The dislocation propagation can be well described by a three-dimensional mechanical model. It was further demonstrated that in wafers being initially free of dislocations no dislocations are generated during flash lamp annealing.