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Version: publishedVersion × Subject: piezoelectricity ×

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    Elastic properties of single crystal Bi12SiO20 as a function of pressure and temperature and acoustic attenuation effects in Bi12 MO20 (M = Si, Ge and Ti)
    (Bristol : IOP Publ., 2020) Haussühl, Eiken; Reichmann, Hans Josef; Schreuer, Jürgen; Friedrich, Alexandra; Hirschle, Christian; Bayarjargal, Lkhamsuren; Winkler, Björn; Alencar, Igor; Wiehl, Leonore; Ganschow, Steffen
    A comprehensive study of sillenite Bi12SiO20 single-crystal properties, including elastic stiffness and piezoelectric coefficients, dielectric permittivity, thermal expansion and molar heat capacity, is presented. Brillouin-interferometry measurements (up to 27 GPa), which were performed at high pressures for the first time, and ab initio calculations based on density functional theory (up to 50 GPa) show the stability of the sillenite structure in the investigated pressure range, in agreement with previous studies. Elastic stiffness coefficients c 11 and c 12 are found to increase continuously with pressure while c 44 increases slightly for lower pressures and remains nearly constant above 15 GPa. Heat-capacity measurements were performed with a quasi-adiabatic calorimeter employing the relaxation method between 2 K and 395 K. No phase transition could be observed in this temperature interval. Standard molar entropy, enthalpy change and Debye temperature are extracted from the data. The results are found to be roughly half of the previous values reported in the literature. The discrepancy is attributed to the overestimation of the Debye temperature which was extracted from high-temperature data. Additionally, Debye temperatures obtained from mean sound velocities derived by Voigt-Reuss averaging are in agreement with our heat-capacity results. Finally, a complete set of electromechanical coefficients was deduced from the application of resonant ultrasound spectroscopy between 103 K and 733 K. No discontinuities in the temperature dependence of the coefficients are observed. High-temperature (up to 1100 K) resonant ultrasound spectra recorded for Bi12 MO20 crystals revealed strong and reversible acoustic dissipation effects at 870 K, 960 K and 550 K for M = Si, Ge and Ti, respectively. Resonances with small contributions from the elastic shear stiffness c 44 and the piezoelectric stress coefficient e 123 are almost unaffected by this dissipation. © 2020 The Author(s). Published by IOP Publishing Ltd.
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    Sound-driven single-electron transfer in a circuit of coupled quantum rails
    ([London] : Nature Publishing Group UK, 2019) Takada, Shintaro; Edlbauer, Hermann; Lepage, Hugo V.; Wang, Junliang; Mortemousque, Pierre-André; Georgiou, Giorgos; Barnes, Crispin H. W.; Ford, Christopher J. B.; Yuan, Mingyun; Santos, Paulo V.; Waintal, Xavier; Ludwig, Arne; Wieck, Andreas D.; Urdampilleta, Matias; Meunier, Tristan; Bäuerle, Christopher
    Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we present two essential building blocks of such a SAW-driven quantum circuit. First, we implement a directional coupler allowing to partition a flying electron arbitrarily into two paths of transportation. Second, we demonstrate a triggered single-electron source enabling synchronisation of the SAW-driven sending process. Exceeding a single-shot transfer efficiency of 99%, we show that a SAW-driven integrated circuit is feasible with single electrons on a large scale. Our results pave the way to perform quantum logic operations with flying electron qubits. © 2019, The Author(s).
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    Impact of size, shape and composition on piezoelectric effects and the electronic properties of InGaAs/GaAs quantum dots
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2007) Schliwa, Andrei; Winkelnkemper, Momme; Bimberg, Dieter
    The strain fields in and around self-organized In(Ga)As/GaAs quantum dots (QD) sensitively depend on QD geometry, average InGaAs composition and the In/Ga distribution profile. Piezoelectric fields of varying size are one result of these strain fields. We study systematically a large variety of realistic QD geometries and composition profiles, and calculate the linear and quadratic parts of the piezoelectric field. The balance of the two orders depends strongly on the QD shape and composition. For pyramidal InAs QDs with sharp interfaces a strong dominance of the second order fields is found. Upon annealing the first order terms become dominant, resulting in a reordering of the electron p- and d-states and a reorientation of the hole wavefunctions.
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    A mathematical framework for standard generalized materials in the rate-independent case
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2006) Mielke, Alexander
    Standard generalized materials are described by an elastic energy density and a dissipation potential. The latter gives rise to the evolution equation (flow law) for the internal variables. The energetic formulation provides a very weak, derivative-free form of this flow law. It is based on a global stability condition and an energy balance. Using time-incremental minimization problems, which allow for the usage of the rich theory in the direct method of the calculus of variations, it is possible to establish general, abstract existence results as well as convergence for numerical approximations. Applications to shape-memory materials and to magnetostrictive or piezoelectric materials are surveyed.