2018, Grossi, A., Perez, E., Zambelli, C., Olivo, P., Miranda, E., Roelofs, R., Woodruff, J., Raisanen, P., Li, W., Givens, M., Costina, I., Schubert, M.A., Wenger, C.

The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufacturing. In this paper, the impact of the precursor chemistries and process conditions on the performance of HfO2 based memristive cells is studied. An extensive characterization of HfO2 based 1T1R cells, a comparison of the cell-to-cell variability, and reliability study is performed. The cells’ behaviors during forming, set, and reset operations are monitored in order to relate their features to conductive filament properties and process-induced variability of the switching parameters. The modeling of the high resistance state (HRS) is performed by applying the Quantum-Point Contact model to assess the link between the deposition condition and the precursor chemistry with the resulting physical cells characteristics.

2017, Lopacinski, Lukasz, Brzozowski, Marcin, Kraemer, Rolf

This paper presents a hardware processor for 100Gbps wireless data link layer. A serial Reed-Solomon decoder requires a clock of 12.5GHz to fulfill timings constraints of the transmission. Receiving a single Ethernet frame on a 100 Gbps physical layer may be faster than accessing DDR3 memory. Processing so fast streams on a state-of-the-art FPGA (field programmable gate arrays) requires a dedicated approach. Thus, the paper presents lightweight RS FEC engine, frames fragmentation, aggregation, and a protocol with selective fragment retransmission. The implemented FPGA demonstrator achieves nearly 120 Gbps and accepts bit error rate (BER) up to 2e - 3. Moreover, redundancy added to the frames is adopted according to the channel BER by a dedicated link adaptation algorithm. At the end, ASIC synthesis results are presented including detailed statistics of consumed energy per bit.

2016, Niu, Gang, Calka, Pauline, Auf der Maur, Matthias, Santoni, Francesco, Guha, Subhajit, Fraschke, Mirko, Hamoumou, Philippe, Gautier, Brice, Perez, Eduardo, Walczyk, Christian, Wenger, Christian, Di Carlo, Aldo, Alff, Lambert, Schroeder, Thomas

Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the “OFF” state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability.

2015, Awny, Ahmed

[no abstract available]

2021, Martín-García, Beatriz, Spirito, Davide, Biffi, Giulia, Artyukhin, Sergey, Francesco Bonaccorso, null, Krahne, Roman

Halide double perovskites are an interesting alternative to Pb-containing counterparts as active materials in optoelectronic devices. Low-dimensional double perovskites are fabricated by introducing large organic cations, resulting in organic/inorganic architectures with one or more inorganic octahedra layers separated by organic cations. Here, we synthesized layered double perovskites based on 3D Cs2AgBiBr6, consisting of double (2L) or single (1L) inorganic octahedra layers, using ammonium cations of different sizes and chemical structures. Temperature-dependent Raman spectroscopy revealed phase transition signatures in both inorganic lattice and organic moieties by detecting variations in their vibrational modes. Changes in the conformational arrangement of the organic cations to an ordered state coincided with a phase transition in the 1L systems with the shortest ammonium moieties. Significant changes of photoluminescence intensity observed around the transition temperature suggest that optical properties may be affected by the octahedral tilts emerging at the phase transition.

2021, Lukose, R., Lisker, M., Akhtar, F., Fraschke, M., Grabolla, T., Mai, A., Lukosius, M.

The original version of this Article omitted an affiliation for M. Lisker. The correct affiliations for M. Lisker are listed below: IHP- Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt (Oder), Germany Technical University of Applied Science Wildau, Hochschulring 1, 15745, Wildau, Germany The original Article and accompanying Supplementary Information file have been corrected.

2016, Dabrowski, J., Lippert, G., Avila, J., Baringhaus, J., Colambo, I., Dedkov, Yu S., Herziger, F., Lupina, G., Maultzsch, J., Schaffus, T., Schroeder, T., Kot, M., Tegenkamp, C., Vignaud, D., Asensio, M.-C.

The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C2H4) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy as well as density functional theory (DFT) calculations, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by 30° with respect to each other. The growth mode is attributed to the mechanism when small graphene “molecules” nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process.

2012, Langendörfer, Peter, Basmer, Thomas

[no abstract available]

2015, You, Tiangui, Ou, Xin, Niu, Gang, Bärwolf, Florian, Li, Guodong, Du, Nan, Bürger, Danilo, Skorupa, Ilona, Jia, Qi, Yu, Wenjie, Wang, Xi, Schmidt, Oliver G., Schmidt, Heidemarie

BiFeO3 based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive switching without an electroforming process. It is evidenced that during the BiFeO3 thin film growth Ti diffuses into the BiFeO3 layer. The diffused Ti effectively traps and releases oxygen vacancies and consequently stabilizes the resistive switching in BiFeO3 MIM structures. Therefore, using Ti implantation of the bottom electrode, the retention performance can be greatly improved with increasing Ti fluence. For the used raster-scanned Ti implantation the lateral Ti distribution is not homogeneous enough and endurance slightly degrades with Ti fluence. The local resistive switching investigated by current sensing atomic force microscopy suggests the capability of down-scaling the resistive switching cell to one BiFeO3 grain size by local Ti implantation of the bottom electrode.

2013, Wietstruck, Matthias, Kaynak, Mehmet, Fiebig, Norbert

[no abstract available]