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    Self-assembly of Co/Pt stripes with current-induced domain wall motion towards 3D racetrack devices
    ([London] : Nature Publishing Group UK, 2024) Fedorov, Pavel; Soldatov, Ivan; Neu, Volker; Schäfer, Rudolf; Schmidt, Oliver G.; Karnaushenko, Daniil
    Modification of the magnetic properties under the induced strain and curvature is a promising avenue to build three-dimensional magnetic devices, based on the domain wall motion. So far, most of the studies with 3D magnetic structures were performed in the helixes and nanowires, mainly with stationary domain walls. In this study, we demonstrate the impact of 3D geometry, strain and curvature on the current-induced domain wall motion and spin-orbital torque efficiency in the heterostructure, realized via a self-assembly rolling technique on a polymeric platform. We introduce a complete 3D memory unit with write, read and store functionality, all based on the field-free domain wall motion. Additionally, we conducted a comparative analysis between 2D and 3D structures, particularly addressing the influence of heat during the electric current pulse sequences. Finally, we demonstrated a remarkable increase of 30% in spin-torque efficiency in 3D configuration.
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    Vertical organic permeable dual-base transistors for logic circuits
    ([London] : Nature Publishing Group UK, 2020) Guo, Erjuan; Wu, Zhongbin; Darbandy, Ghader; Xing, Shen; Wang, Shu-Jen; Tahn, Alexander; Göbel, Michael; Kloes, Alexander; Leo, Karl; Kleemann, Hans
    The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of <2.0 V. We believe that this work offers a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits.