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Publisher: [London] : Nature Publishing Group UK × Subject: three-dimensional modeling ×

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    Self-assembly of Co/Pt stripes with current-induced domain wall motion towards 3D racetrack devices
    ([London] : Nature Publishing Group UK, 2024) Fedorov, Pavel; Soldatov, Ivan; Neu, Volker; Schäfer, Rudolf; Schmidt, Oliver G.; Karnaushenko, Daniil
    Modification of the magnetic properties under the induced strain and curvature is a promising avenue to build three-dimensional magnetic devices, based on the domain wall motion. So far, most of the studies with 3D magnetic structures were performed in the helixes and nanowires, mainly with stationary domain walls. In this study, we demonstrate the impact of 3D geometry, strain and curvature on the current-induced domain wall motion and spin-orbital torque efficiency in the heterostructure, realized via a self-assembly rolling technique on a polymeric platform. We introduce a complete 3D memory unit with write, read and store functionality, all based on the field-free domain wall motion. Additionally, we conducted a comparative analysis between 2D and 3D structures, particularly addressing the influence of heat during the electric current pulse sequences. Finally, we demonstrated a remarkable increase of 30% in spin-torque efficiency in 3D configuration.
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    Unconventional Hall response in the quantum limit of HfTe5
    ([London] : Nature Publishing Group UK, 2020) Galeski, S.; Zhao, X.; Wawrzyńczak, R.; Meng, T.; Förster, T.; Lozano, P.M.; Honnali, S.; Lamba, N.; Ehmcke, T.; Markou, A.; Li., Q.; Gu, G.; Zhu, W.; Wosnitza, J.; Felser, C.; Chen, G.F.; Gooth, J.
    Interacting electrons confined to their lowest Landau level in a high magnetic field can form a variety of correlated states, some of which manifest themselves in a Hall effect. Although such states have been predicted to occur in three-dimensional semimetals, a corresponding Hall response has not yet been experimentally observed. Here, we report the observation of an unconventional Hall response in the quantum limit of the bulk semimetal HfTe5, adjacent to the three-dimensional quantum Hall effect of a single electron band at low magnetic fields. The additional plateau-like feature in the Hall conductivity of the lowest Landau level is accompanied by a Shubnikov-de Haas minimum in the longitudinal electrical resistivity and its magnitude relates as 3/5 to the height of the last plateau of the three-dimensional quantum Hall effect. Our findings are consistent with strong electron-electron interactions, stabilizing an unconventional variant of the Hall effect in a three-dimensional material in the quantum limit.