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- ItemOn the Conduction Properties of Vertical GaN n-Channel Trench MISFETs([New York, NY] : IEEE, 2021) Treidel, Eldad Bahat; Hilt, Oliver; Hoffmann, Veit; Brunner, Frank; Bickel, Nicole; Thies, Andreas; Tetzner, Kornelius; Gargouri, Hassan; Huber, Christian; Donimirski, Konstanty; Wurfl, JoachimON-state conductance properties of vertical GaN n -channel trench MISFETs manufactured on different GaN substrates and having different gate trench orientations are studied up to 200 °C ambient temperature. The best performing devices, with a maximum output current above 4 kA/cm 2 and an area specific ON-state resistance of 1.1 mΩ·cm 2 , are manufactured on ammonothermal GaN substrate with the gate channel parallel to the a-plane of the GaN crystal. The scalability of the devices up to 40 mm gate periphery is investigated and demonstrated. It is found that, in addition to oxide interface traps, the semiconductor border traps in the p-GaN layer limit the available mobile channel electrons and that the channel surface roughness scattering limits the channel mobility. Both strongly depend on the gate trench orientation and on the GaN substrate defect density.
- ItemMaster Memory Function for Delay-Based Reservoir Computers With Single-Variable Dynamics([New York, NY] : IEEE, 2022) Köster, Felix; Yanchuk, Serhiy; Lüdge, KathyWe show that many delay-based reservoir computers considered in the literature can be characterized by a universal master memory function (MMF). Once computed for two independent parameters, this function provides linear memory capacity for any delay-based single-variable reservoir with small inputs. Moreover, we propose an analytical description of the MMF that enables its efficient and fast computation. Our approach can be applied not only to single-variable delay-based reservoirs governed by known dynamical rules, such as the Mackey–Glass or Stuart–Landau-like systems, but also to reservoirs whose dynamical model is not available.