Search Results
Radiofrequency Electromagnetic Fields Cause Non-Temperature-Induced Physical and Biological Effects in Cancer Cells
2022, Wust, Peter, Veltsista, Paraskevi D., Oberacker, Eva, Yavvari, Prabhusrinivas, Walther, Wolfgang, Bengtsson, Olof, Sterner-Kock, Anja, Weinhart, Marie, Heyd, Florian, Grabowski, Patricia, Stintzing, Sebastian, Heinrich, Wolfgang, Stein, Ulrike, Ghadjar, Pirus
Non-temperature-induced effects of radiofrequency electromagnetic fields (RF) have been controversial for decades. Here, we established measurement techniques to prove their existence by investigating energy deposition in tumor cells under RF exposure and upon adding amplitude modulation (AM) (AMRF). Using a preclinical device LabEHY-200 with a novel in vitro applicator, we analyzed the power deposition and system parameters for five human colorectal cancer cell lines and measured the apoptosis rates in vitro and tumor growth inhibition in vivo in comparison to water bath heating. We showed enhanced anticancer effects of RF and AMRF in vitro and in vivo and verified the non-temperature-induced origin of the effects. Furthermore, apoptotic enhancement by AM was correlated with cell membrane stiffness. Our findings not only provide a strategy to significantly enhance non-temperature-induced anticancer cell effects in vitro and in vivo but also provide a perspective for a potentially more effective tumor therapy.
16.3 w peak‐power pulsed all‐diode laser based multi‐wavelength master‐oscillator power‐amplifier system at 964 nm
2021, Vu, Thi Nghiem, Tien, Tran Quoc, Sumpf, Bernd, Klehr, Andreas, Fricke, Jörg, Wenzel, Hans, Tränkle, Günther
An all-diode laser-based master oscillator power amplifier (MOPA) configuration for the generation of ns-pulses with high peak power, stable wavelength and small spectral line width is presented. The MOPA emits alternating at two wavelengths in the spectral range between 964 nm and 968 nm, suitable for the detection of water vapor by absorption spectroscopy. The monolithic master oscillator (MO) consists of two slightly detuned distributed feedback laser branches, whose emission is combined in a Y-coupler. The two emission wavelengths can be adjusted by varying the current or temperature to an absorption line and to a non-absorbing region. The power amplifier (PA) consists of a ridge-waveguide (RW) section and a tapered section, monolithically integrated within one chip. The RW section of the PA acts as an optical gate and converts the continuous wave input beam emitted by the MO into a sequence of short optical pulses, which are subsequently amplified by the tapered section to boost the output power. For a pulse width of 8 ns, a peak power of 16.3 W and a side mode suppression ratio of more than 37 dB are achieved at a repetition rate of 25 kHz. The measured spectral width of 10 pm, i.e., 0.1 cm−1, is limited by the resolution of the optical spectrum analyzer. The generated pulses emitting alternating at two wavelengths can be utilized in a differential absorption light detection and ranging system.
Effect of electron blocking layer doping and composition on the performance of 310 nm light emitting diodes
2017, Kolbe, Tim, Knauer, Arne, Rass, Jens, Cho, Hyun Kyong, Hagedorn, Sylvia, Einfeldt, Sven, Kneissl, Michael, Weyers, Markus
The effects of composition and p-doping profile of the AlGaN:Mg electron blocking layer (EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated. The carrier injection and internal quantum efficiency of the LEDs were simulated and compared to electroluminescence measurements. The light output power depends strongly on the temporal biscyclopentadienylmagnesium (Cp 2 Mg) carrier gas flow profile during growth as well as on the aluminum profile of the AlGaN:Mg EBL. The highest emission power has been found for an EBL with the highest Cp 2 Mg carrier gas flow and a gradually decreasing aluminum content in direction to the p-side of the LED. This effect is attributed to an improved carrier injection and confinement that prevents electron leakage into the p-doped region of the LED with a simultaneously enhanced carrier injection into the active region.
Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector
2020, Čibiraitė-Lukenskienė, Dovilė, Ikamas, Kęstutis, Lisauskas, Tautvydas, Krozer, Viktor, Roskos, Hartmut G., Lisauskas, Alvydas
This work presents, to our knowledge, the first completely passive imaging with human-body-emitted radiation in the lower THz frequency range using a broadband uncooled detector. The sensor consists of a Si CMOS field-effect transistor with an integrated log-spiral THz antenna. This THz sensor was measured to exhibit a rather flat responsivity over the 0.1–1.5-THz frequency range, with values√ of the optical responsivity and noise-equivalent power of around 40 mA/W and 42 pW/ Hz, respectively. These values are in good agreement with simulations which suggest an even broader flat responsivity range exceeding 2.0 THz. The successful imaging demonstrates the impressive thermal sensitivity which can be achieved with such a sensor. Recording of a 2.3 × 7.5-cm2-sized image of the fingers of a hand with a pixel size of 1 mm2 at a scanning speed of 1 mm/s leads to a signal-to-noise ratio of 2 and a noise-equivalent temperature difference of 4.4 K. This approach shows a new sensing approach with field-effect transistors as THz detectors which are usually used for active THz detection. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.
Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks
2020, Tsao, Yi-Fan, Würfl, Joachim, Hsu, Heng-Tung
In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at millimeter frequency range. While the conventional configuration adopted open-stub loading for compensation of the off-state capacitance, radial stubs were introduced in our approach to improve the operational bandwidth of the SPDT switch. Implemented in 0.15 m GaAs pHEMT technology, the proposed configuration exhibited a measured insertion loss of less than 2.5 dB with better than 30 dB isolation level over the frequency range from 33 GHz to 44 GHz. In terms of the bandwidth of operation, the proposed configuration achieved a fractional bandwidth of 28.5% compared to that of 12.3% for the conventional approach. Such superior bandwidth performance is mainly attributed to the less frequency dependent nature of the radial stubs.
Wide Field Spectral Imaging with Shifted Excitation Raman Difference Spectroscopy Using the Nod and Shuffle Technique
2020, Korinth, Florian, Schmälzlin, Elmar, Stiebing, Clara, Urrutia, Tanya, Micheva, Genoveva, Sandin, Christer, Müller, André, Maiwald, Martin, Sumpf, Bernd, Krafft, Christoph, Tränkle, Günther, Roth, Martin M, Popp, Jürgen
Wide field Raman imaging using the integral field spectroscopy approach was used as a fast, one shot imaging method for the simultaneous collection of all spectra composing a Raman image. For the suppression of autofluorescence and background signals such as room light, shifted excitation Raman difference spectroscopy (SERDS) was applied to remove background artifacts in Raman spectra. To reduce acquisition times in wide field SERDS imaging, we adapted the nod and shuffle technique from astrophysics and implemented it into a wide field SERDS imaging setup. In our adapted version, the nod corresponds to the change in excitation wavelength, whereas the shuffle corresponds to the shifting of charges up and down on a Charge-Coupled Device (CCD) chip synchronous to the change in excitation wavelength. We coupled this improved wide field SERDS imaging setup to diode lasers with 784.4/785.5 and 457.7/458.9 nm excitation and applied it to samples such as paracetamol and aspirin tablets, polystyrene and polymethyl methacrylate beads, as well as pork meat using multiple accumulations with acquisition times in the range of 50 to 200 ms. The results tackle two main challenges of SERDS imaging: gradual photobleaching changes the autofluorescence background, and multiple readouts of CCD detector prolong the acquisition time.