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- ItemImpact of atomic defects in the electronic states of FeSe1-x Sx superconducting crystals(Bristol : IOP Publishing, 2022) Aragón Sánchez, Jazmín; Amigó, María Lourdes; Belussi, Cristian Horacio; Ale Crivillero, María Victoria; Suárez, Sergio; Guimpel, Julio; Nieva, Gladys; Gayone, Julio Esteban; Fasano, YaninaThe electronic properties of Fe-based superconductors are drastically affected by deformations on their crystal structure introduced by doping and pressure. Here we study single crystals of FeSe 1 − x Sx and reveal that local crystal deformations such as atomic-scale defects impact the spectral shape of the electronic core level states of the material. By means of scanning tunneling microscopy we image S-doping induced defects as well as diluted dumbbell defects associated with Fe vacancies. We have access to the electronic structure of the samples by means of x-ray photoemission spectroscopy (XPS) and show that the spectral shape of the Se core levels can only be adequately described by considering a principal plus a minor component of the electronic states. We find this result for both pure and S-doped samples, irrespective that in the latter case the material presents extra crystal defects associated to doping with S atoms. We argue that the second component in our XPS spectra is associated with the ubiquitous dumbbell defects in FeSe that are known to entail a significant modification of the electronic clouds of surrounding atoms.
- ItemBa termination of Ge(001) studied with STM(Bristol : IOP Publishing, 2015) Koczorowski, W.; Grzela, T.; Radny, M.W.; Schofield, S.R.; Capellini, G.; Czajka, R.; Schroeder, T.; Curson, N.J.We use controlled annealing to tune the interfacial properties of a sub-monolayer and monolayer coverages of Ba atoms deposited on Ge(001), enabling the generation of either of two fundamentally distinct interfacial phases, as revealed by scanning tunneling microscopy. Firstly we identify the two key structural phases associated with this adsorption system, namely on-top adsorption and surface alloy formation, by performing a deposition and annealing experiment at a coverage low enough (~0.15 ML) that isolated Ba-related features can be individually resolved. Subsequently we investigate the monolayer coverage case, of interest for passivation schemes of future Ge based devices, for which we find that the thermal evaporation of Ba onto a Ge(001) surface at room temperature results in on-top adsorption. This separation (lack of intermixing) between Ba and Ge layers is retained through successive annealing steps to temperatures of 470, 570, 670 and 770 K although a gradual ordering of the Ba layer is observed at 570 K and above, accompanied by a decrease in Ba layer density. Annealing above 770 K produces the 2D surface alloy phase accompanied by strain relief through monolayer height trench formation. An annealing temperature of 1070 K sees a further change in surface morphology but retention of the 2D surface alloy characteristic. These results are discussed in view of their possible implications for future semiconductor integrated circuit technology.