(Bristol : Institute of Physics Publishing, 2014) Reiche, M.; Kittler, M.; Schmelz, M.; Stolz, R.; Pippel, E.; Uebensee, H.; Kermann, M.; Ortlepp, T.
Low-temperature measurements proved the existence of a two-dimensional electron gas at defined dislocation arrays in silicon. As a consequence, single-electron transitions (Coulomb blockades) are observed. It is shown that the high strain at dislocation cores modifies the band structure and results in the formation of quantum wells along dislocation lines. This causes quantization of energy levels inducing the formation of Coulomb blockades.
