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- ItemModeling of Atmospheric-Pressure Dielectric Barrier Discharges in Argon with Small Admixtures of Tetramethylsilane(Dordrecht : Springer Science + Business Media B.V., 2021) Loffhagen, Detlef; Becker, Markus M.; Czerny, Andreas K.; Klages, Claus-PeterA time-dependent, spatially one-dimensional fluid-Poisson model is applied to analyze the impact of small amounts of tetramethylsilane (TMS) as precursor on the discharge characteristics of an atmospheric-pressure dielectric barrier discharge (DBD) in argon. Based on an established reaction kinetics for argon, it includes a plasma chemistry for TMS, which is validated by measurements of the ignition voltage at the frequency f=86.2kHz for TMS amounts of up to 200 ppm. Details of both a reduced Ar-TMS reaction kinetics scheme and an extended plasma-chemistry model involving about 60 species and 580 reactions related to TMS are given. It is found that good agreement between measured and calculated data can be obtained, when assuming that 25% of the reactions of TMS with excited argon atoms with a rate coefficient of 3.0×10−16m3/s lead to the production of electrons due to Penning ionization. Modeling results for an applied voltage Ua,0=4kV show that TMS is depleted during the residence time of the plasma in the DBD, where the percentage consumption of TMS decreases with increasing TMS fraction because only a finite number of excited argon species is available to dissociate and/or ionize the precursor via energy transfer. Main species resulting from that TMS depletion are presented and discussed. In particular, the analysis clearly indicates that trimethylsilyl cations can be considered to be mainly responsible for the film formation.
- ItemResidual Layer Removal of Technical Glass Resulting from Reactive Atmospheric Plasma Jet Etching by Pulsed Laser Irradiation(Dordrecht : Springer Science + Business Media B.V., 2020) Kazemi, Faezeh; Arnold, Thomas; Lorenz, Pierre; Ehrhardt, Martin; Zimmer, KlausUltrahigh-precision machining of glass is indispensable for optical component fabrication and therefore for applications. In this regard, plasma jet assisted chemical etching technologies enable new fabrication processes for enhanced optical functionalities due to their deterministic localized machining capabilities. This technique has been successfully applied to fused silica and silicon. However, applications require specific glass properties are related to complex material compositions of the glass. Hence, reactive plasma etching of these optical glasses is a challenging task. For instance, etching of metal oxide containing glass like N-BK7 by a fluorine-based reactive atmospheric plasma jet (RAPJ) exhibits currently limitations due to the formation of non-volatile reaction products that remain on the glass surface as a layer. Therefore, a procedure consisting of RAPJ etching and laser ablation is proposed for the machining of N-BK7. The capability of laser-based removal of residual layers is compared to water-based solving of the residual layer. After RAPJ etching of N-BK7 using a CF4–O2 gas mixture with an average microwave power of 16 W, the samples are cleaned either by a water-based solvent or by the ablation with a nanosecond-pulsed ultraviolet laser. The laser irradiation with fluences of 2.8 J/cm2 results in a localized removal of the residual layer. It is demonstrated that the roughness of the laser-cleaned N-BK7 surface is similarly low as solvent-based cleaned samples but the pulsed laser enhanced cleaning allows a dry processing at atmospheric pressure as well as a localized processing with a high lateral resolution.
- ItemEffect of a Spatially Fluctuating Heating of Particles in a Plasma Spray Process(Dordrecht : Springer Science + Business Media B.V., 2022) Zhu, T.; Baeva, M.; Testrich, H.; Kewitz, T.; Foest, R.The work is concerned with the effect of a spatially fluctuating heating of Al2O3 particles with diameters of 5–120 μm during a plasma spray process. A plasma jet is generated in a mixture of Ar (40 NLPM) and H2 (14 NLPM) and in pure Ar at an electric current of 600 A. The tracing of the injected particles in the plume region of the plasma jets is considered in the framework of a three-dimensional model taking into account a turbulent fluid flow. It is shown that the heat source for the injected particles exhibits a well pronounced spatially fluctuating structure due to the enhancement of the thermal conductivity resulting from dissociation and ionization of the molecular gas in the temperature range of 2500–4000 K and 13,000–14,000 K, respectively. During their travel towards the substrate, the particles are therefore repeatedly heated in the gas mixture in contrast to the case of pure argon. Particles injected in the gas mixture reach the substrate with a higher average temperature and velocity.
- ItemAbout the Development and Dynamics of Microdischarges in Toluene-Containing Air(Dordrecht : Springer Science + Business Media B.V., 2019) Brandenburg, Ronny; Jahanbakhsh, Sina; Schiorlin, Milko; Schmidt, MichaelThe development of microdischarges and the inception dynamics of subsequent microdischarges in an electrode arrangement consisting of a metal pin and a hemispherical dielectric-covered electrode, operated in air with a small toluene admixture, is studied. The discharge is operated with sinusoidal high voltage. A gated ICCD camera and a current probe enable the recording of images and current pulses of the single microdischarges, respectively, while the spatio-temporally resolved development is measured with a multi-dimensional time-correlated single photon counting technique. The overall discharge dynamics changes significantly if a concentration of 35 ppm toluene is added to dry air. A lower high voltage amplitude than in dry air is needed for stable discharge operation. This can be explained by the lower ionization energy of toluene compared to molecular oxygen and nitrogen. The microdischarge development is the same with or without admixture, i.e. a positive (cathode directed) streamer mechanism is observed. Lower mean power is dissipated into the discharge when toluene is admixed. The main effect caused by toluene admixture is the suppression of high-energy microdischarges in case of the cathodic pin half-cycle of the sinusoidal high voltage. The influence on the inception voltage by additional ionization mechanisms and volume memory effects, the consumption of energetic electrons for toluene decomposition reactions, and the modification of the surface by plasma treatment are discussed as possible reasons.
- ItemA Comparison of Floating-Electrode DBD and kINPen Jet: Plasma Parameters to Achieve Similar Growth Reduction in Colon Cancer Cells Under Standardized Conditions(Dordrecht : Springer Science + Business Media B.V., 2017-9-6) Bekeschus, Sander; Lin, Abraham; Fridman, Alexander; Wende, Kristian; Weltmann, Klaus-Dieter; Miller, VandanaA comparative study of two plasma sources (floating-electrode dielectric barrier discharge, DBD, Drexel University; atmospheric pressure argon plasma jet, kINPen, INP Greifswald) on cancer cell toxicity was performed. Cell culture protocols, cytotoxicity assays, and procedures for assessment of hydrogen peroxide (H2O2) were standardized between both labs. The inhibitory concentration 50 (IC50) and its corresponding H2O2 deposition was determined for both devices. For the DBD, IC50 and H2O2 generation were largely dependent on the total energy input but not pulsing frequency, treatment time, or total number of cells. DBD cytotoxicity could not be replicated by addition of H2O2 alone and was inhibited by larger amounts of liquid present during the treatment. Jet plasma toxicity depended on peroxide generation as well as total cell number and amount of liquid. Thus, the amount of liquid present during plasma treatment in vitro is key in attenuating short-lived species or other physical effects from plasmas. These in vitro results suggest a role of liquids in or on tissues during plasma treatment in a clinical setting. Additionally, we provide a platform for correlation between different plasma sources for a predefined cellular response.
- ItemDrift–diffusion simulation of S-shaped current–voltage relations for organic semiconductor devices(Dordrecht : Springer Science + Business Media B.V., 2020) Doan, Duy Hai; Fischer, Axel; Fuhrmann, Jürgen; Glitzky, Annegret; Liero, MatthiasWe present an electrothermal drift–diffusion model for organic semiconductor devices with Gauss–Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature-dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter–Gummel scheme. Using path-following techniques, we demonstrate that the model exhibits S-shaped current–voltage curves with regions of negative differential resistance, which were only recently observed experimentally. © 2020, The Author(s).
- ItemExperimental system design for the integration of trapped-ion and superconducting qubit systems(Dordrecht : Springer Science + Business Media B.V., 2016) De Motte, D.; Grounds, A.R.; Rehák, M.; Rodriguez Blanco, A.; Lekitsch, B.; Giri, G.S.; Neilinger, P.; Oelsner, G.; Il’ichev, E.; Grajcar, M.; Hensinger, W.K.We present a design for the experimental integration of ion trapping and superconducting qubit systems as a step towards the realization of a quantum hybrid system. The scheme addresses two key difficulties in realizing such a system: a combined microfabricated ion trap and superconducting qubit architecture, and the experimental infrastructure to facilitate both technologies. Developing upon work by Kielpinski et al. (Phys Rev Lett 108(13):130504, 2012. doi:10.1103/PhysRevLett.108.130504), we describe the design, simulation and fabrication process for a microfabricated ion trap capable of coupling an ion to a superconducting microwave LC circuit with a coupling strength in the tens of kHz. We also describe existing difficulties in combining the experimental infrastructure of an ion trapping set-up into a dilution refrigerator with superconducting qubits and present solutions that can be immediately implemented using current technology.