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- ItemSpatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam(London : Nature Publishing Group, 2021) Heilmann, Martin; Deinhart, Victor; Tahraoui, Abbes; Höflich, Katja; Lopes, J. Marcelo J.The combination of two-dimensional (2D) materials into heterostructures enables the formation of atomically thin devices with designed properties. To achieve a high-density, bottom-up integration, the growth of these 2D heterostructures via van der Waals epitaxy (vdWE) is an attractive alternative to the currently mostly employed mechanical transfer, which is problematic in terms of scaling and reproducibility. Controlling the location of the nuclei formation remains a key challenge in vdWE. Here, a focused He ion beam is used to deterministically place defects in graphene substrates, which serve as preferential nucleation sites for the growth of insulating, 2D hexagonal boron nitride (h-BN). Therewith a mask-free, selective-area vdWE (SAvdWE) is demonstrated, in which nucleation yield and crystal quality of h-BN are controlled by the ion beam parameters used for defect formation. Moreover, h-BN grown via SAvdWE is shown to exhibit electron tunneling characteristics comparable to those of mechanically transferred layers, thereby lying the foundation for a reliable, high-density array fabrication of 2D heterostructures for device integration via defect engineering in 2D substrates.
- ItemImpact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices(London : Nature Publishing Group, 2018) Grossi, A.; Perez, E.; Zambelli, C.; Olivo, P.; Miranda, E.; Roelofs, R.; Woodruff, J.; Raisanen, P.; Li, W.; Givens, M.; Costina, I.; Schubert, M.A.; Wenger, C.The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufacturing. In this paper, the impact of the precursor chemistries and process conditions on the performance of HfO2 based memristive cells is studied. An extensive characterization of HfO2 based 1T1R cells, a comparison of the cell-to-cell variability, and reliability study is performed. The cells’ behaviors during forming, set, and reset operations are monitored in order to relate their features to conductive filament properties and process-induced variability of the switching parameters. The modeling of the high resistance state (HRS) is performed by applying the Quantum-Point Contact model to assess the link between the deposition condition and the precursor chemistry with the resulting physical cells characteristics.
- ItemGeneration of crystal-structure transverse patterns via a self-frequency-doubling laser(London : Nature Publishing Group, 2013) Yu, H.; Zhang, H.; Wang, Y.; Wang, Z.; Wang, J.; Petrov, V.Two-dimensional (2D) visible crystal-structure patterns analogous to the quantum harmonic oscillator (QHO) have been experimentally observed in the near- and far-fields of a self-frequency-doubling (SFD) microchip laser. Different with the fundamental modes, the localization of the SFD light is changed with the propagation. Calculation based on Hermite-Gaussian (HG) functions and second harmonic generation theory reproduces well the patterns both in the near- and far-field which correspond to the intensity distribution in coordinate and momentum spaces, respectively. Considering the analogy of wave functions of the transverse HG mode and 2D harmonic oscillator, we propose that the simple monolithic SFD lasers can be used for developing of new materials and devices and testing 2D quantum mechanical theories.