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- ItemTwo-dimensional membrane as elastic shell with proof on the folds revealed by three-dimensional atomic mapping(London : Nature Publishing Group, 2015) Zhao, Jiong; Deng, Qingming; Ly, Thuc Hue; Han, Gang Hee; Sandeep, Gorantla; Rümmeli, Mark H.The great application potential for two-dimensional (2D) membranes (MoS2, WSe2, graphene and so on) aroused much effort to understand their fundamental mechanical properties. The out-of-plane bending rigidity is the key factor that controls the membrane morphology under external fields. Herein we provide an easy method to reconstruct the 3D structures of the folded edges of these 2D membranes on the atomic scale, using high-resolution (S)TEM images. After quantitative comparison with continuum mechanics shell model, it is verified that the bending behaviour of the studied 2D materials can be well explained by the linear elastic shell model. And the bending rigidities can thus be derived by fitting with our experimental results. Recall almost only theoretical approaches can access the bending properties of these 2D membranes before, now a new experimental method to measure the bending rigidity of such flexible and atomic thick 2D membranes is proposed.
- ItemTwinned growth behaviour of two-dimensional materials(London : Nature Publishing Group, 2016) Zhang, Tao; Jiang, Bei; Xu, Zhen; Mendes, Rafael G.; Xiao, Yao; Chen, Linfeng; Fang, Liwen; Gemming, Thomas; Chen, Shengli; Rümmeli, Mark H.; Fu, LeiTwinned growth behaviour in the rapidly emerging area of two-dimensional nanomaterials still remains unexplored although it could be exploited to fabricate heterostructure and superlattice materials. Here we demonstrate how one can utilize the twinned growth relationship between two two-dimensional materials to construct vertically stacked heterostructures. As a demonstration, we achieve 100% overlap of the two transition metal dichalcogenide layers constituting a ReS2/WS2 vertical heterostructure. Moreover, the crystal size of the stacked structure is an order of magnitude larger than previous reports. Such twinned transition metal dichalcogenides vertical heterostructures exhibit great potential for use in optical, electronic and catalytic applications. The simplicity of the twinned growth can be utilized to expand the fabrication of other heterostructures or two-dimensional material superlattice and this strategy can be considered as an enabling technology for research in the emerging field of two-dimensional van der Waals heterostructures.
- ItemWavelength-tunable entangled photons from silicon-integrated III–V quantum dots(London : Nature Publishing Group, 2016) Chen, Yan; Zhang, Jiaxiang; Zopf, Michael; Jung, Kyubong; Zhang, Yang; Keil, Robert; Ding, Fei; Schmidt, Oliver G.Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms.
- ItemSingle-atom catalytic growth of crystals using graphene as a case study(London : Nature Publishing Group, 2021) Yang, Xiaoqin; Liu, Yu; Ta, Huy Q.; Rezvani, Ehsan; Zhang, Yue; Zeng, Mengqi; Fu, Lei; Bachmatiuk, Alicja; Luo, Jinping; Liu, Lijun; Rümmeli, Mark H.Anchored Single-atom catalysts have emerged as a cutting-edge research field holding tremendous appeal for applications in the fields of chemicals, energy and the environment. However, single-atom-catalysts for crystal growth is a nascent field. Of the few studies available, all of them are based on state-of-the-art in situ microscopy investigations and computational studies, and they all look at the growth of monolayer graphene from a single-atom catalyst. Despite the limited number of studies, they do, collectively, represent a new sub-field of single-atom catalysis, namely single-atom catalytic growth of crystalline solids. In this review, we examine them on substrate-supported and as freestanding graphene fabrication, as well as rolled-up graphene, viz., single-walled carbon nanotubes (SWCNT), grown from a single atom. We also briefly discuss the catalytic etching of graphene and SWCNT’s and conclude by outlining the future directions we envision this nascent field to take.
- ItemFreestanding few-layer sheets of a dual topological insulator(London : Nature Publishing Group, 2021) Anh, Mai Lê; Potapov, Pavel; Lubk, Axel; Doert, Thomas; Ruck, MichaelThe emergence of topological insulators (TIs) raised high expectations for their application in quantum computers and spintronics. Being bulk semiconductors, their nontrivial topology at the electronic bandgap enables dissipation-free charge and spin transport in protected metallic surface states. For application, crystalline thin films are requested in sufficient quantity. A suitable approach is the liquid phase exfoliation (LPE) of TI crystals that have layered structures. Bi2TeI is a weak 3D TI, which leads to protected edge states at the side facets of a crystal, as well as a topological crystalline insulator, which is responsible for protected states at the top and bottom faces. We developed an effective, scalable protocol for LPE of freestanding nanoflakes from Bi2TeI crystals. By heat treatment and sonication in isopropyl alcohol and poly(vinylpyrrolidone), crystalline Bi2TeI sheets with a thickness of ~50 nm were obtained and can therefore be considered for further processing toward microelectronic applications.
- ItemValence-state reflectometry of complex oxide heterointerfaces(London : Nature Publishing Group, 2016) Hamann-Borrero, Jorge E.; Macke, Sebastian; Choi, Woo Seok; Sutarto, Ronny; He, Feizhou; Radi, Abdullah; Elfimov, Ilya; Green, Robert J.; Haverkort, Maurits W.; Zabolotnyy, Volodymyr B.; Lee, Ho Nyung; Sawatzky, George A.; Hinkov, VladimirEmergent phenomena in transition-metal-oxide heterostructures such as interface superconductivity and magnetism have been attributed to electronic reconstruction, which, however, is difficult to detect and characterise. Here we overcome the associated difficulties to simultaneously address the electronic degrees of freedom and distinguish interface from bulk effects by implementing a novel approach to resonant X-ray reflectivity (RXR). Our RXR study of the chemical and valance profiles along the polar (001) direction of a LaCoO3 film on NdGaO3 reveals a pronounced valence-state reconstruction from Co3+ in the bulk to Co2+ at the surface, with an areal density close to 0.5 Co2+ ions per unit cell. An identical film capped with polar (001) LaAlO3 maintains the Co3+ valence over its entire thickness. We interpret this as evidence for electronic reconstruction in the uncapped film, involving the transfer of 0.5e− per unit cell to the subsurface CoO2 layer at its LaO-terminated polar surface.
- ItemA hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures(London : Nature Publishing Group, 2017) Wofford, Joseph M.; Nakhaie, Siamak; Krause, Thilo; Liu, Xianjie; Ramsteiner, Manfred; Hanke, Michael; Riechert, Henning; Lopes, J.; Marcelo, J.Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN and graphene to form in a stacked heterostructure in the favorable growth environment provided by a Ni(111) substrate. This involves first saturating a Ni film on MgO(111) with C, growing h-BN on the exposed metal surface, and precipitating the C back to the h-BN/Ni interface to form graphene. The resulting laterally continuous heterostructure is composed of a top layer of few-layer thick h-BN on an intermediate few-layer thick graphene, lying on top of Ni/MgO(111). Examinations by synchrotron-based grazing incidence diffraction, X-ray photoemission spectroscopy, and UV-Raman spectroscopy reveal that while the h-BN is relaxed, the lattice constant of graphene is significantly reduced, likely due to nitrogen doping. These results illustrate a different pathway for the production of h-BN/graphene heterostructures, and open a new perspective for the large-area preparation of heterosystems combining graphene and other 2D or 3D materials.
- ItemAtomically precise semiconductor-graphene and hBN interfaces by Ge intercalation(London : Nature Publishing Group, 2015) Verbitskiy, N.I.; Fedorov, A.V.; Profeta, G.; Stroppa, A.; Petaccia, L.; Senkovskiy, B.; Nefedov, A.; Wöll, C.; Usachov, D.Yu.; Vyalikh, D.V.; Yashina, L.V.; Eliseev, A.A.; Pichler, T.; Grüneis, A.The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tailor the interfaces between them. Here we show a new direct bottom-up method for the fabrication of high-quality atomically precise interfaces between 2D materials, like graphene and hexagonal boron nitride (hBN), and classical semiconductor via Ge intercalation. Using angle-resolved photoemission spectroscopy and complementary DFT modelling we observed for the first time that epitaxially grown graphene with the Ge monolayer underneath demonstrates Dirac Fermions unaffected by the substrate as well as an unperturbed electronic band structure of hBN. This approach provides the intrinsic relativistic 2D electron gas towards integration in semiconductor technology. Hence, these new interfaces are a promising path for the integration of graphene and hBN into state-of-the-art semiconductor technology.
- ItemModulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys(London : Nature Publishing Group, 2017) Zallo, Eugenio; Cecchi, Stefano; Boschker, Jos E.; Mio, Antonio M.; Arciprete, Fabrizio; Privitera, Stefania; Calarco, RaffaellaThe present work displays a route to design strain gradients at the interface between substrate and van der Waals bonded materials. The latter are expected to grow decoupled from the substrates and fully relaxed and thus, by definition, incompatible with conventional strain engineering. By the usage of passivated vicinal surfaces we are able to insert strain at step edges of layered chalcogenides, as demonstrated by the tilt of the epilayer in the growth direction with respect of the substrate orientation. The interplay between classical and van der Waals epitaxy can be modulated with an accurate choice of the substrate miscut. High quality crystalline GexSb2Te3+x with almost Ge1Sb2Te4 composition and improved degree of ordering of the vacancy layers is thus obtained by epitaxial growth of layers on 3–4° stepped Si substrates. These results highlight that it is possible to build and control strain in van der Waals systems, therefore opening up new prospects for the functionalization of epilayers by directly employing vicinal substrates.
- ItemSuperconducting ferecrystals: Turbostratically disordered atomic-scale layered (PbSe)1.14(NbSe2)n thin films(London : Nature Publishing Group, 2016) Grosse, Corinna; Alemayehu, Matti B.; Falmbigl, Matthias; Mogilatenko, Anna; Chiatti, Olivio; Johnson, David C.; Fischer, Saskia F.Hybrid electronic heterostructure films of semi- and superconducting layers possess very different properties from their bulk counterparts. Here, we demonstrate superconductivity in ferecrystals: turbostratically disordered atomic-scale layered structures of single-, bi- and trilayers of NbSe2 separated by PbSe layers. The turbostratic (orientation) disorder between individual layers does not destroy superconductivity. Our method of fabricating artificial sequences of atomic-scale 2D layers, structurally independent of their neighbours in the growth direction, opens up new possibilities of stacking arbitrary numbers of hybrid layers which are not available otherwise, because epitaxial strain is avoided. The observation of superconductivity and systematic Tc changes with nanostructure make this synthesis approach of particular interest for realizing hybrid systems in the search of 2D superconductivity and the design of novel electronic heterostructures.