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Now showing 1 - 4 of 4
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    Magnetic origami creates high performance micro devices
    (London : Nature Publishing Group, 2019) Gabler, F.; Karnaushenko, D.D.; Karnaushenko, D.; Schmidt, O.G.
    Self-assembly of two-dimensional patterned nanomembranes into three-dimensional micro-architectures has been considered a powerful approach for parallel and scalable manufacturing of the next generation of micro-electronic devices. However, the formation pathway towards the final geometry into which two-dimensional nanomembranes can transform depends on many available degrees of freedom and is plagued by structural inaccuracies. Especially for high-aspect-ratio nanomembranes, the potential energy landscape gives way to a manifold of complex pathways towards misassembly. Therefore, the self-assembly yield and device quality remain low and cannot compete with state-of-the art technologies. Here we present an alternative approach for the assembly of high-aspect-ratio nanomembranes into microelectronic devices with unprecedented control by remotely programming their assembly behavior under the influence of external magnetic fields. This form of magnetic Origami creates micro energy storage devices with excellent performance and high yield unleashing the full potential of magnetic field assisted assembly for on-chip manufacturing processes.
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    Perovskite phase heterojunction solar cells
    (London : Nature Publishing Group, 2022) Ji, Ran; Zhang, Zongbao; Hofstetter, Yvonne J.; Buschbeck, Robin; Hänisch, Christian; Paulus, Fabian; Vaynzof, Yana
    Modern photovoltaic devices are often based on a heterojunction structure where two components with different optoelectronic properties are interfaced. The properties of each side of the junction can be tuned by either utilizing different materials (for example, donor/acceptor) or doping (for example, p–n junction) or even varying their dimensionality (for example, 3D/2D). Here we demonstrate the concept of phase heterojunction (PHJ) solar cells by utilizing two polymorphs of the same material. We demonstrate the approach by forming γ-CsPbI3/β-CsPbI3 perovskite PHJ solar cells. We find that all of the photovoltaic parameters of the PHJ device significantly surpass those of each of the single-phase devices, resulting in a maximum power conversion efficiency of 20.1%. These improvements originate from the efficient passivation of the β-CsPbI3 by the larger bandgap γ-CsPbI3, the increase in the built-in potential of the PHJ devices enabled by the energetic alignment between the two phases and the enhanced absorption of light by the PHJ structure. The approach demonstrated here offers new possibilities for the development of photovoltaic devices based on polymorphic materials.
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    Discovery of ZrCoBi based half Heuslers with high thermoelectric conversion efficiency
    (London : Nature Publishing Group, 2018) Zhu, H.; He, R.; Mao, J.; Zhu, Q.; Li, C.; Sun, J.; Ren, W.; Wang, Y.; Liu, Z.; Tang, Z.; Sotnikov, A.; Wang, Z.; Broido, D.; Singh, D.J.; Chen, G.; Nielsch, K.; Ren, Z.
    Thermoelectric materials are capable of converting waste heat into electricity. The dimensionless figure-of-merit (ZT), as the critical measure for the material's thermoelectric performance, plays a decisive role in the energy conversion efficiency. Half-Heusler materials, as one of the most promising candidates for thermoelectric power generation, have relatively low ZTs compared to other material systems. Here we report the discovery of p-type ZrCoBi-based half-Heuslers with a record-high ZT of ∼1.42 at 973 K and a high thermoelectric conversion efficiency of ∼9% at the temperature difference of ∼500 K. Such an outstanding thermoelectric performance originates from its unique band structure offering a high band degeneracy (N v) of 10 in conjunction with a low thermal conductivity benefiting from the low mean sound velocity (v m ∼2800 m s-1). Our work demonstrates that ZrCoBi-based half-Heuslers are promising candidates for high-temperature thermoelectric power generation.
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    Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots
    (London : Nature Publishing Group, 2017) Huber, D.; Reindl, M.; Huo, Y.; Huang, H.; Wildmann, J.S.; Schmidt, O.G.; Rastelli, A.; Trotta, R.
    The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski-Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g (2) (0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.