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- ItemRipple coarsening on ion beam-eroded surfaces(New York, NY [u.a.] : Springer, 2014) Teichmann, M.; Lorbeer, J.; Frost, F.; Rauschenbach, B.Abstract: The temporal evolution of ripple pattern on Ge, Si, Al2O3, and SiO2 by low-energy ion beam erosion with Xe + ions is studied. The experiments focus on the ripple dynamics in a fluence range from 1.1 × 1017 cm-2 to 1.3 × 1019 cm-2 at ion incidence angles of 65° and 75° and ion energies of 600 and 1,200 eV. At low fluences a short-wavelength ripple structure emerges on the surface that is superimposed and later on dominated by long wavelength structures for increasing fluences. The coarsening of short wavelength ripples depends on the material system and angle of incidence. These observations are associated with the influence of reflected primary ions and gradient-dependent sputtering. The investigations reveal that coarsening of the pattern is a universal behavior for all investigated materials, just at the earliest accessible stage of surface evolution.
- ItemOptical properties of silicon nanowire arrays formed by metal-assisted chemical etching: Evidences for light localization effect(New York, NY [u.a.] : Springer, 2012) Osminkina, L.A.; Gonchar, K.A.; Marshov, V.S.; Bunkov, K.V.; Petrov, D.V.; Golovan, L.A.; Talkenberg, F.; Sivakov, V.A.; Timoshenko, V.Y.We study the structure and optical properties of arrays of silicon nanowires (SiNWs) with a mean diameter of approximately 100 nm and length of about 1-25 μm formed on crystalline silicon (c-Si) substrates by using metal-assisted chemical etching in hydrofluoric acid solutions. In the middle infrared spectral region, the reflectance and transmittance of the formed SiNW arrays can be described in the framework of an effective medium with the effective refractive index of about 1.3 (porosity, approximately 75%), while a strong light scattering for wavelength of 0.3 ÷ 1 μm results in a decrease of the total reflectance of 1%-5%, which cannot be described in the effective medium approximation. The Raman scattering intensity under excitation at approximately 1 μm increases strongly in the sample with SiNWs in comparison with that in c-Si substrate. This effect is related to an increase of the light-matter interaction time due to the strong scattering of the excitation light in SiNW array. The prepared SiNWs are discussed as a kind of 'black silicon', which can be formed in a large scale and can be used for photonic applications as well as in molecular sensing.
- ItemMorphological Evolution of Pit-Patterned Si(001) Substrates Driven by Surface-Energy Reduction(New York, NY [u.a.] : Springer, 2017) Salvalaglio, Marco; Backofen, Rainer; Voigt, Axel; Montalenti, FrancescoLateral ordering of heteroepitaxial islands can be conveniently achieved by suitable pit-patterning of the substrate prior to deposition. Controlling shape, orientation, and size of the pits is not trivial as, being metastable, they can significantly evolve during deposition/annealing. In this paper, we exploit a continuum model to explore the typical metastable pit morphologies that can be expected on Si(001), depending on the initial depth/shape. Evolution is predicted using a surface-diffusion model, formulated in a phase-field framework, and tackling surface-energy anisotropy. Results are shown to nicely reproduce typical metastable shapes reported in the literature. Moreover, long time scale evolutions of pit profiles with different depths are found to follow a similar kinetic pathway. The model is also exploited to treat the case of heteroepitaxial growth involving two materials characterized by different facets in their equilibrium Wulff’s shape. This can lead to significant changes in morphologies, such as a rotation of the pit during deposition as evidenced in Ge/Si experiments.