Filters

2014 - 20173

More filters

20193
Reset filters

Settings

Publisher: New York : American Institute of Physics Ă— Subject: Lattice constants Ă—

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item
    The influence of the in-plane lattice constant on the superconducting transition temperature of FeSe0.7Te0.3 thin films
    (New York : American Institute of Physics, 2017) Yuan, Feifei; Iida, Kazumasa; Grinenko, Vadim; Chekhonin, Paul; Pukenas, Aurimas; Skrotzki, Werner; Sakoda, Masahito; Naito, Michio; Sala, Alberto; Putti, Marina; Yamashita, Aichi; Takano, Yoshihiko; Shi, Zhixiang; Nielsch, Kornelius; HĂĽhne, Ruben
    Epitaxial Fe(Se,Te) thin films were prepared by pulsed laser deposition on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT), CaF2-buffered LSAT and bare CaF2 substrates, which exhibit an almost identical in-plane lattice parameter. The composition of all Fe(Se,Te) films were determined to be FeSe0.7Te0.3 by energy dispersive X-ray spectroscopy, irrespective of the substrate. Albeit the lattice parameters of all templates have comparable values, the in-plane lattice parameter of the FeSe0.7Te0.3 films varies significantly. We found that the superconducting transition temperature (Tc) of FeSe0.7Te0.3 thin films is strongly correlated with their a-axis lattice parameter. The highest Tc of over 19 K was observed for the film on bare CaF2 substrate, which is related to unexpectedly large in-plane compressive strain originating mostly from the thermal expansion mismatch between the FeSe0.7Te0.3 film and the substrate.
  • Thumbnail Image
    Item
    Structural properties of Co2TiSi films on GaAs(001)
    (New York : American Institute of Physics, 2016) Jenichen, B.; Herfort, J.; Hanke, M.; Jahn, U.; Kong, X.; Dau, M.T.; Trampert, A.; Kirmse, H.; Erwin, S.C.
    Co2TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the L21 and B2 structures and considering the influence of non-stoichiometry. Columnar growth is found and attributed to inhomogeneous epitaxial strain from non-random alloying. In films with thicknesses up to 13 nm, these columns may be the origin of perpendicular magnetization with the easy axis perpendicular to the sample surface. We found L21 and B2 ordered regions, however the [Co]/[Ti]-ratio is changing in dependence of the position in the film. The resulting columnar structure is leading to anisotropic B2-ordering with the best order parallel to the axes of the columns.
  • Thumbnail Image
    Item
    The Bain library: A Cu-Au buffer template for a continuous variation of lattice parameters in epitaxial films
    (New York : American Institute of Physics, 2014) Kauffmann-Weiss, S.; Hamann, S.; Reichel, L.; Siegel, A.; Alexandrakis, V.; Heller, R.; Schultz, L.; Ludwig, A.; Fähler, S.
    Smallest variations of the lattice parameter result in significant changes in material properties. Whereas in bulk, lattice parameters can only be changed by composition or temperature, coherent epitaxial growth of thin films on single crystals allows adjusting the lattice parameters independently. Up to now only discrete values were accessible by using different buffer or substrate materials. We realize a lateral variation of in-plane lattice parameters using combinatorial film deposition of epitaxial Cu-Au on a 4-in. Si wafer. This template gives the possibility to adjust the in-plane lattice parameter over a wide range from 0.365 nm up to 0.382 nm.