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- ItemMagnetic properties of GaAs-Fe3Si core-shell nanowires — A comparison of ensemble and single nanowire investigation(New York : American Institute of Physics, 2017) Hilse, Maria; Jenichen, Bernd; Herfort, JensOn the basis of semiconductor-ferromagnet GaAs-Fe3Si core-shell nanowires (Nws) we compare the facilities of magnetic Nw ensemble measurements by superconducting quantum interference device magnetometry versus investigations on single Nws by magnetic force microscopy and computational micromagnetic modeling. Where a careful analysis of ensemble measurements backed up by transmission electron microscopy gave no insights on the properties of the Nw shells, single Nw investigation turned out to be absolutely essential.
- ItemThickness dependent exchange bias in martensitic epitaxial Ni-Mn-Sn thin films(New York : American Institute of Physics, 2013) Behler, Anna; Teichert, Niclas; Dutta, Biswanath; Waske, Anja; Hickel, Tilmann; Auge, Alexander; Hütten, Andreas; Eckert, JürgenA thickness dependent exchange bias in the low temperature martensitic state of epitaxial Ni-Mn-Sn thin films is found. The effect can be retained down to very small thicknesses. For a Ni50Mn32Sn18 thin film, which does not undergo a martensitic transformation, no exchange bias is observed. Our results suggest that a significant interplay between ferromagnetic and antiferromagnetic regions, which is the origin for exchange bias, is only present in the martensite. The finding is supported by ab initio calculations showing that the antiferromagnetic order is stabilized in the phase.
- ItemEnhancement of switching speed of BiFeO3 capacitors by magnetic fields(New York : American Institute of Physics, 2014) Guo, E.J.; Das, S.; Herklotz, A.The effect of a magnetic field on the ferroelectric switching kinetics of BiFeO3 (BFO) capacitors with La0.8Ca0.2MnO3 (LCMO) bottom electrode and Pt top contact has been investigated. We find a strong dependence of the remnant polarization and coercive field on the magnetic field. The switching time can be systematically tuned by magnetic field and reaches a tenfold reduction around the Curie temperature of LCMO at 4 T. We attribute this behavior to the splitting of the voltage drops across the BFO film and the LCMO bottom electrode, which can be strongly influenced by an external magnetic field due to the magnetoresistance. Further experiments on the BFO capacitors with SrRuO3 bottom electrodes show little magnetic field dependence of ferroelectric switching confirming our interpretation. Our results provide an efficient route to control the ferroelectric switching speed through the magnetic field, implying potential application in multifunctional devices.