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    Ferroelectric switching in epitaxial GeTe films
    (New York : American Institute of Physics, 2014) Kolobov, A.V.; Kim, D.J.; Giussani, A.; Fons, P.; Tominaga, J.; Calarco, R.; Gruverman, A.
    In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.
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    The impact of surface morphology on the magnetovolume transition in magnetocaloric LaFe11.8Si1.2
    (New York : American Institute of Physics, 2016) Waske, A.; Lovell, E.; Funk, A.; Sellschopp, K.; Rack, A.; Giebeler, L.; Gostin, P.F.; Fähler, S.; Cohen, L.F.
    First order magnetocaloric materials reach high entropy changes but at the same time exhibit hysteresis losses which depend on the sample’s microstructure. We use non-destructive 3D X-ray microtomography to understand the role of surface morphology for the magnetovolume transition of LaFe11.8Si1.2. The technique provides unique information on the spatial distribution of the volume change at the transition and its relationship with the surface morphology. Complementary Hall probe imaging confirms that on a morphologically complex surface minimization of strain energy dominates. Our findings sketch the way for a tailored surface morphology with low hysteresis without changing the underlying phase transition.