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Publisher: Weinheim : Wiley-VCH × Subject: doping ×

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    Molecular Beam Epitaxy Growth and Characterization of Germanium-Doped Cubic AlxGa1−xN
    (Weinheim : Wiley-VCH, 2020) Deppe, Michael; Henksmeier, Tobias; Gerlach, Jürgen W.; Reuter, Dirk; As, Donat J.
    In cubic (c-)GaN Ge has emerged as a promising alternative to Si for n-type doping, offering the advantage of slightly improved electrical properties. Herein, a study on Ge doping of the ternary alloy c-AlxGa1−xN is presented. Ge-doped c-AlxGa1−xN layers are grown by plasma-assisted molecular beam epitaxy. In two sample series, both the Al mole fraction x and the doping level are varied. The incorporation of Ge is verified by time-of-flight secondary ion mass spectrometry. Ge incorporation and donor concentrations rise exponentially with increasing Ge cell temperature. A maximum donor concentration of 1.4 × 1020 cm−3 is achieved. While the incorporation of Ge is almost independent of x, incorporation of O, which acts as an unintentional donor, increases for higher x. Dislocation densities start increasing when doping levels of around 3 × 1019 cm−3 are exceeded. Also photoluminescence intensities begin to drop at these high doping levels. Optical emission of layers with x > 0.25 is found to originate from a defect level 0.9 eV below the indirect bandgap, which is not related to Ge. In the investigated range 0 ≤ x ≤ 0.6, Ge is a suitable donor in c-AlxGa1−xN up to the low 1019 cm−3 range.
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    Synthesis of Doped Porous 3D Graphene Structures by Chemical Vapor Deposition and Its Applications
    (Weinheim : Wiley-VCH, 2019) Ullah, Sami; Hasan, Maria; Ta, Huy Q.; Zhao, Liang; Shi, Qitao; Fu, Lei; Choi, Jinho; Yang, Ruizhi; Liu, Zhongfan; Rümmeli, Mark H.
    Graphene doping principally commenced to compensate for its inert nature and create an appropriate bandgap. Doping of 3D graphene has emerged as a topic of interest because of attempts to combine its large available surface area—arising from its interconnected porous architecture—with superior catalytic, structural, chemical, and biocompatible characteristics that can be induced by doping. In light of the latest developments, this review provides an overview of the scalable chemical vapor deposition (CVD)-based growth of doped 3D graphene materials as well as their applications in various contexts, such as in devices used for energy generation and gas storage and biosensors. In particular, single- and multielement doping of 3D graphene by various dopants (such as nitrogen (N), boron (B), sulfur (S) and phosphorous (P)), the doping configurations of the resultant materials, an overview of recent developments in the field of CVD, and the influence of various parameters of CVD on graphene doping and 3D morphologies are focused in this paper. Finally, this report concludes the discussion by mentioning the existing challenges and future opportunities of these developing graphitic materials, intending to inspire the unveiling of more exciting functionalized 3D graphene morphologies and their potential properties, which can hopefully realize many possible applications. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim