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Publisher: Weinheim : Wiley-VCH × Subject: luminescence ×

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Now showing 1 - 2 of 2
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    Current Status of Carbon‐Related Defect Luminescence in GaN
    (Weinheim : Wiley-VCH, 2021) Zimmermann, Friederike; Beyer, Jan; Röder, Christian; Beyer, Franziska C.; Richter, Eberhard; Irmscher, Klaus; Heitmann, Johannes
    Highly insulating layers are a prerequisite for gallium nitride (GaN)-based power electronic devices. For this purpose, carbon doping is one of the currently pursued approaches. However, its impact on the optical and electrical properties of GaN has been widely debated in the scientific community. For further improvement of device performance, a better understanding of the role of related defects is essential. To study optically active point defects, photoluminescence is one of the most frequently used experimental characterization techniques. Herein, the main recent advances in the attribution of carbon-related photoluminescence bands are reviewed, which were enabled by the interplay of a refinement of growth and characterization techniques and state-of-the-art first-principles calculations developed during the last decade. The predicted electronic structures of isolated carbon defects and selected carbon-impurity complexes are compared to experimental results. Taking into account both of these, a comprehensive overview on the present state of interpretation of carbon-related broad luminescence bands in bulk GaN is presented.
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    Thermally Activated Delayed Fluorescence in a Y3N@C80 Endohedral Fullerene: Time-Resolved Luminescence and EPR Studies
    (Weinheim : Wiley-VCH, 2017-12-8) Zalibera, Michal; Krylov, Denis S.; Karagiannis, Dimitrios; Will, Paul-Anton; Ziegs, Frank; Schiemenz, Sandra; Lubitz, Wolfgang; Reineke, Sebastian; Savitsky, Anton; Popov, Alexey A.
    The endohedral fullerene Y3N@C80 exhibits luminescence with reasonable quantum yield and extraordinary long lifetime. By variable-temperature steady-state and time-resolved luminescence spectroscopy, it is demonstrated that above 60 K the Y3N@C80 exhibits thermally activated delayed fluorescence with maximum emission at 120 K and a negligible prompt fluorescence. Below 60 K, a phosphorescence with a lifetime of 192±1 ms is observed. Spin distribution and dynamics in the triplet excited state is investigated with X- and W-band EPR and ENDOR spectroscopies and DFT computations. Finally, electroluminescence of the Y3N@C80/PFO film is demonstrated opening the possibility for red-emitting fullerene-based organic light-emitting diodes (OLEDs).