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    Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices
    (London : Nature Publishing Group, 2018) Grossi, A.; Perez, E.; Zambelli, C.; Olivo, P.; Miranda, E.; Roelofs, R.; Woodruff, J.; Raisanen, P.; Li, W.; Givens, M.; Costina, I.; Schubert, M.A.; Wenger, C.
    The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufacturing. In this paper, the impact of the precursor chemistries and process conditions on the performance of HfO2 based memristive cells is studied. An extensive characterization of HfO2 based 1T1R cells, a comparison of the cell-to-cell variability, and reliability study is performed. The cells’ behaviors during forming, set, and reset operations are monitored in order to relate their features to conductive filament properties and process-induced variability of the switching parameters. The modeling of the high resistance state (HRS) is performed by applying the Quantum-Point Contact model to assess the link between the deposition condition and the precursor chemistry with the resulting physical cells characteristics.
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    Mesoscale Dzyaloshinskii-Moriya interaction: Geometrical tailoring of the magnetochirality
    (London : Nature Publishing Group, 2018) Volkov, O.M.; Sheka, D.D.; Gaididei, Y.; Kravchuk, V.P.; Rößler, U.K.; Fassbender, J.; Makarov, D.
    Crystals with broken inversion symmetry can host fundamentally appealing and technologically relevant periodical or localized chiral magnetic textures. The type of the texture as well as its magnetochiral properties are determined by the intrinsic Dzyaloshinskii-Moriya interaction (DMI), which is a material property and can hardly be changed. Here we put forth a method to create new artificial chiral nanoscale objects with tunable magnetochiral properties from standard magnetic materials by using geometrical manipulations. We introduce a mesoscale Dzyaloshinskii-Moriya interaction that combines the intrinsic spin-orbit and extrinsic curvature-driven DMI terms and depends both on the material and geometrical parameters. The vector of the mesoscale DMI determines magnetochiral properties of any curved magnetic system with broken inversion symmetry. The strength and orientation of this vector can be changed by properly choosing the geometry. For a specific example of nanosized magnetic helix, the same material system with different geometrical parameters can acquire one of three zero-temperature magnetic phases, namely, phase with a quasitangential magnetization state, phase with a periodical state and one intermediate phase with a periodical domain wall state. Our approach paves the way towards the realization of a new class of nanoscale spintronic and spinorbitronic devices with the geometrically tunable magnetochirality.