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- ItemInterface polarization model for a 2-dimensional electron gas at the BaSnO3/LaInO3 interface([London] : Macmillan Publishers Limited, part of Springer Nature, 2019) Kim, Young Mo; Markurt, T.; Kim, Youjung; Zupancic, M.; Shin, Juyeon; Albrecht, M.; Char, KookrinIn order to explain the experimental sheet carrier density n2D at the interface of BaSnO3/LaInO3, we consider a model that is based on the presence of interface polarization in LaInO3 which extends over 2 pseudocubic unit cells from the interface and eventually disappears in the next 2 unit cells. Considering such interface polarization in calculations based on 1D Poisson-Schrödinger equations, we consistently explain the dependence of the sheet carrier density of BaSnO3/LaInO3 heterinterfaces on the thickness of the LaInO3 layer and the La doping of the BaSnO3 layer. Our model is supported by a quantitative analysis of atomic position obtained from high resolution transmission electron microscopy which evidences suppression of the octahedral tilt and a vertical lattice expansion in LaInO3 over 2–3 pseudocubic unit cells at the coherently strained interface.