Search Results
Electroless-deposited platinum antennas for wireless surface acousticwave sensors
2019, Brachmann, E., Seifert, M., Neumann, N., Alshwawreh, N., Uhlemann, M., Menzel, S.B., Acker, J., Herold, S., Hoffmann, V., Gemming, T.
In an effort to develop a cost-efficient technology for wireless high-temperature surface acoustic wave sensors, this study presents an evaluation of a combined method that integrates physical vapor deposition with electroless deposition for the fabrication of platinum-based planar antennas. The proposed manufacturing process becomes attractive for narrow, thick, and sparse metallizations for antennas in the MHz to GHz frequency range. In detail, narrow platinum-based lines of a width down to 40 μm were electroless-deposited on γ -Al2O3 substrates using different seed layers. At first, the electrolyte chemistry was optimized to obtain the highest deposition rate. Films with various thickness were prepared and the electrical resistivity, microstructure, and chemical composition in the as-prepared state and after annealing at temperatures up to 1100 °C were evaluated. Using these material parameters, the antenna was simulated with an electromagnetic full-wave simulation tool and then fabricated. The electrical parameters, including the S-parameters of the antenna, were measured. The agreement between the simulated and the realized antenna is then discussed.
Coherent interaction of atoms with a beam of light confined in a light cage
2021, Davidson-Marquis, Flavie, Gargiulo, Julian, Gómez-López, Esteban, Jang, Bumjoon, Kroh, Tim, Müller, Chris, Ziegler, Mario, Maier, Stefan A., Kübler, Harald, Schmidt, Markus A., Benson, Oliver
Controlling coherent interaction between optical fields and quantum systems in scalable, integrated platforms is essential for quantum technologies. Miniaturised, warm alkali-vapour cells integrated with on-chip photonic devices represent an attractive system, in particular for delay or storage of a single-photon quantum state. Hollow-core fibres or planar waveguides are widely used to confine light over long distances enhancing light-matter interaction in atomic-vapour cells. However, they suffer from inefficient filling times, enhanced dephasing for atoms near the surfaces, and limited light-matter overlap. We report here on the observation of modified electromagnetically induced transparency for a non-diffractive beam of light in an on-chip, laterally-accessible hollow-core light cage. Atomic layer deposition of an alumina nanofilm onto the light-cage structure was utilised to precisely tune the high-transmission spectral region of the light-cage mode to the operation wavelength of the atomic transition, while additionally protecting the polymer against the corrosive alkali vapour. The experiments show strong, coherent light-matter coupling over lengths substantially exceeding the Rayleigh range. Additionally, the stable non-degrading performance and extreme versatility of the light cage provide an excellent basis for a manifold of quantum-storage and quantum-nonlinear applications, highlighting it as a compelling candidate for all-on-chip, integrable, low-cost, vapour-based photon delay.
Impact of rare earth doping on the luminescence of lanthanum aluminum silicate glasses for radiation sensing
2022, Shaw, Ruth E., Kalnins, Christopher A. G., Whittaker, Carly A., Moffatt, Jillian E., Tsiminis, Georgios, Klantsataya, Elizaveta, Ottaway, David, Spooner, Nigel A., Litzkendorf, Doris, Matthes, Anne, Schwuchow, Anka, Wondraczek, Katrin, Ebendorff-Heidepriem, Heike
Large core soft glass fibers have been demonstrated to be promising candidates as intrinsic fiber sensors for radiation detection and dosimetry applications. Doping with rare earth ions enhanced their radiation sensitivity. SiO2-Al2O3-La2O3 (SAL) glasses offer easy fabrication of large core fibers with high rare earth concentration and higher mechanical strength than soft glasses. This paper evaluates the suitability of the SAL glass type for radiation dosimetry based on optically stimulated luminescence (OSL) via a comprehensive investigation of the spectroscopic and dosimetric properties of undoped and differently rare earth doped bulk SAL glass samples. Due to the low intensity of the rare earth luminescence peaks in the 250–400 nm OSL detection range, the OSL response for all the SAL glasses is not caused by the rare earth ions but by radiation-induced defects that act as intrinsic centers for the recombination of electrons and holes produced by the ionizing radiation, trapped in fabrication induced defect centers, and then released via stimulation with 470 nm light. The rare earth ions interfere with these processes involving intrinsic centers. This dosimetric behavior of highly rare earth doped SAL glasses suggests that enhancement of OSL response requires lower rare earth concentrations and/or longer wavelength OSL detection range.
Multi-walled carbon nanotube-based composite materials as catalyst support for water–gas shift and hydroformylation reactions
2019, Wolf, Patrick, Logemann, Morten, Schörner, Markus, Keller, Laura, Haumann, Marco, Wessling, Matthias
In times of depleting fossil fuel reserves, optimizing industrial catalytic reactions has become increasingly important. One possibility for optimization is the use of homogenous catalysts, which are advantageous over heterogeneous catalysts because of mild reaction conditions as well as higher selectivity and activity. A new emerging technology, supported ionic liquid phase (SILP), was developed to permanently immobilize homogeneous catalyst complexes for continuous processes. However, these SILP catalysts are unable to form freestanding supports by themselves. This study presents a new method to introduce the SILP system into a support made from multi-walled carbon nanotubes (MWCNT). In a first step, SILP catalysts were prepared for hydroformylation as well as low-temperature water–gas shift (WGS) reactions. These catalysts were integrated into freestanding microtubes formed from MWCNTs, with silica (for hydroformylation) or alumina particles (for WGS) incorporated. In hydroformylation, the activity increased significantly by around 400% when the pure MWCNT material was used as SILP support. An opposite trend was observed for WGS, where pure alumina particles exhibited the highest activity. A significant advantage of the MWCNT composite materials is the possibility to coat them with separation layers, which allows their application in membrane reactors for more efficient processes.
PTFEP-Al2O3 hybrid nanowires reducing thrombosis and biofouling
2019, Haidar, Ayman, Ali, Awadelkareem A., Veziroglu, Salih, Fiutowski, Jacek, Eichler, Hermann, Müller, Isabelle, Kiefer, Karin, Faupel, Franz, Bischoff, Markus, Veith, Michael, Aktas, Oral Cenk, Abdul-Khaliq, Hashim
Thrombosis and bacterial infection are major problems in cardiovascular implants. Here we demonstrated that a superhydrophobic surface composed of poly(bis(2,2,2-trifluoroethoxy)phosphazene) (PTFEP)-Al2O3 hybrid nanowires (NWs) is effective to reduce both platelet adhesion/activation and bacterial adherence/colonization. The proposed approach allows surface modification of cardiovascular implants which have 3D complex geometries. © 2019 The Royal Society of Chemistry.
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
2016, Chabak, Kelson D., Moser, Neil, Green, Andrew J., Walker, Dennis E., Tetlak, Stephen E., Heller, Eric, Crespo, Antonio, Fitch, Robert, McCandless, Jonathan P., Leedy, Kevin, Baldini, Michele, Wagner, Gunter, Galazka, Zbigniew, Li, Xiuling, Jessen, Gregg
Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.
Polarity Control in Group-III Nitrides beyond Pragmatism
2016, Mohn, Stefan, Stolyarchuk, Natalia, Markurt, Toni, Kirste, Ronny, Hoffmann, Marc P., Collazo, Ramón, Courville, Aimeric, Di Felice, Rosa, Sitar, Zlatko, Vennéguès, Philippe, Albrecht, Martin
Controlling the polarity of polar semiconductors on nonpolar substrates offers a wealth of device concepts in the form of heteropolar junctions. A key to realize such structures is an appropriate buffer-layer design that, in the past, has been developed by empiricism. GaN or ZnO on sapphire are prominent examples for that. Understanding the basic processes that mediate polarity, however, is still an unsolved problem. In this work, we study the structure of buffer layers for group-III nitrides on sapphire by transmission electron microscopy as an example. We show that it is the conversion of the sapphire surface into a rhombohedral aluminum-oxynitride layer that converts the initial N-polar surface to Al polarity. With the various AlxOyNz phases of the pseudobinary Al2O3-AlN system and their tolerance against intrinsic defects, typical for oxides, a smooth transition between the octahedrally coordinated Al in the sapphire and the tetrahedrally coordinated Al in AlN becomes feasible. Based on these results, we discuss the consequences for achieving either polarity and shed light on widely applied concepts in the field of group-III nitrides like nitridation and low-temperature buffer layers.
Ripple coarsening on ion beam-eroded surfaces
2014, Teichmann, M., Lorbeer, J., Frost, F., Rauschenbach, B.
Abstract: The temporal evolution of ripple pattern on Ge, Si, Al2O3, and SiO2 by low-energy ion beam erosion with Xe + ions is studied. The experiments focus on the ripple dynamics in a fluence range from 1.1 × 1017 cm-2 to 1.3 × 1019 cm-2 at ion incidence angles of 65° and 75° and ion energies of 600 and 1,200 eV. At low fluences a short-wavelength ripple structure emerges on the surface that is superimposed and later on dominated by long wavelength structures for increasing fluences. The coarsening of short wavelength ripples depends on the material system and angle of incidence. These observations are associated with the influence of reflected primary ions and gradient-dependent sputtering. The investigations reveal that coarsening of the pattern is a universal behavior for all investigated materials, just at the earliest accessible stage of surface evolution.
Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O
2020, Hoffmann, Georg, Budde, Melanie, Mazzolini, Piero, Bierwagend, Oliver
Sources of suboxides, providing several advantages over metal sources for the molecular beam epitaxy (MBE) of oxides, are conventionally realized by decomposing the corresponding oxide charge at extreme temperatures. By quadrupole mass spectrometry of the direct flux from an effusion cell, we compare this conventional approach to the reaction of a mixed oxide + metal charge as a source for suboxides with the examples of SnO2 + Sn → 2 SnO and Ga2O3 + 4 Ga → 3 Ga2O. The high decomposition temperatures of the pure oxide charge were found to produce a high parasitic oxygen background. In contrast, the mixed charges reacted at significantly lower temperatures, providing high suboxide fluxes without additional parasitic oxygen. For the SnO source, we found a significant fraction of Sn2O2 in the flux from the mixed charge that was basically absent in the flux from the pure oxide charge. We demonstrate the plasma-assisted MBE growth of SnO2 using the mixed Sn + SnO2 charge to require less activated oxygen and a significantly lower source temperature than the corresponding growth from a pure Sn charge. Thus, the sublimation of mixed metal + oxide charges provides an efficient suboxide source for the growth of oxides by MBE. Thermodynamic calculations predict this advantage for further oxides as well, e.g., SiO2, GeO2, Al2O3, In2O3, La2O3, and Pr2O3 © 2020 Author(s).
Kinetic investigation of para-nitrophenol reduction with photodeposited platinum nanoparticles onto tunicate cellulose
2022, Thiel, T.A., Zhang, X., Radhakrishnan, B., van de Krol, R., Abdi, F.F., Schroeter, M., Schomäcker, R., Schwarze, M.
Photodeposition is a specific method for depositing metallic co-catalysts onto photocatalysts and was applied for immobilizing platinum nanoparticles onto cellulose, a photocatalytically inactive biopolymer. The obtained Pt@cellulose catalysts show narrow and well-dispersed nanoparticles with average sizes between 2 and 5 nm, whereby loading, size and distribution depend on the preparation conditions. The catalysts were investigated for the hydrogenation of para-nitrophenol via transfer hydrogenation using sodium borohydride as the hydrogen source, and the reaction rate constant was determined using the pseudo-first-order reaction rate law. The Pt@cellulose catalysts are catalytically active with rate constant values k from 0.09 × 10−3 to 0.43 × 10−3 min−1, which were higher than the rate constant of a commercial Pt@Al2O3 catalyst (k = 0.09 × 10−3 min−1). Additionally, the Pt@cellulose catalyst can be used for electrochemical hydrogenation of para-nitrophenol where the hydrogen is electrocatalytically formed. The electrochemical hydrogenation is faster compared to the transfer hydrogenation (k = 0.11 min−1).