2017, Schumacher, P., Mayr, S.G., Rauschenbach, B.

Germanium thin films were deposited by Pulsed Laser Deposition (PLD) onto single crystal Ge (100) and Si (100) substrates with a native oxide film on the surface. The topography of the surface was investigated by Atomic Force Microscopy (AFM) to evaluate the scaling behavior of the surface roughness of amorphous and polycrystalline Ge films grown on substrates with different roughnesses. Roughness evolution was interpreted within the framework of stochastic rate equations for thin film growth. Here the Kardar-Parisi-Zhang equation was used to describe the smoothening process. Additionally, a roughening regime was observed in which 3-dimensional growth occurred. Diffusion of the deposited Ge adatoms controlled the growth of the amorphous Ge thin films. The growth of polycrystalline thin Ge films was dominated by diffusion processes only in the initial stage of the growth.

2014, Asenova, I., Manova, D., Mändl, S.

In this paper we investigate the possibility of incorporating nitrogen into amorphous, photocatalytic TiO2 thin films, prepared at room temperature, during the growth process. The aim is to reduce the bandgap of the UV active thin films. Physical vapor deposition experiments employing a titanium vacuum arc with gas backfill ranging from pure oxygen to pure nitrogen, are carried out. The resulting films are characterized for chemical composition, phase composition, optical properties and hydrophilicity in order to determine a correlation between gas composition and thin film properties. The experimental results point that a visible change in the band structure of the deposited layers is achieved.

2020, Pan, Xuanzhao, Zhao, Jiangbo, Qian, Gujie, Zhang, Xiaozhou, Ruan, Yinlan, Abell, Andrew, Ebendorff-Heidepriem, Heike

The development of amorphous films with a wide transmission window and high refractive index is of growing significance due to the strong demand of integrating functional nanoparticles for the next-generation hybrid optoelectronic films. High-index TeO2-based glass films made via the sol-gel process are particularly suitable as their low temperature preparation process promises high compatibility with a large variety of nanoparticles and substrates that suffer from low thermal stability. However, due to the lack of in-depth understanding of the mechanisms of the formation of undesired metallic-Te (highly absorbing species) in the films, the preparation of high-transmission TeO2-based sol-gel films has been severely hampered. Here, by gaining insight into the mechanistic chemistry of metallic-Te formation at different stages during the non-hydrolytic sol-gel process, we identify the chemical route to prevent the generation of metallic-Te in a TeO2-based film. The as-prepared TeO2-based film exhibits a high transmission that is close to the theoretical limit. This opens up a new avenue for advancing the performance of hybrid optoelectronic films via incorporating a large variety of unique nanoparticles. © 2020 The Royal Society of Chemistry.