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- ItemCross-polarization effects in sheared 2D grating couplers in a photonic BiCMOS technology(Bristol : IOP Publ., 2020) Georgieva, Galina; Voigt, Karsten; Mai, Christian; Seiler, Pascal M.; Petermann, Klaus; Zimmermann, LarsWe investigate numerically and experimentally sheared 2D grating couplers in a photonic BiCMOS technology with a focus on their splitting behavior. Two realization forms of a waveguide-To-grating shear angle are considered. The cross-polarization used as a figure-of-merit is shown to be strongly dependent on the grating perturbation strength and is a crucial limitation not only for the grating splitting performance, but also for its coupling efficiency. © 2020 The Japan Society of Applied Physics.
- ItemHigh-performance SiGe HBTs for next generation BiCMOS technology(Bristol : IOP Publ., 2018) Rücker, Holger; Heinemann, BerndThis paper addresses fabrication aspects of SiGe heterojunction bipolar transistors which record high-speed performance. We previously reported fT values of 505 GHz, fMAX values of 720 GHz, and ring oscillator gate delays of 1.34 ps for these transistors. The impact of critical process steps on radio frequency performance is discussed. This includes millisecond annealing for enhanced dopant activation and optimization of the epitaxial growth process of the base layer. It is demonstrated that the use of a disilane precursor instead of silane can result in reduced base resistance and favorable device scalability.
- ItemSISSI-LO : Schlussbericht ; Berichtszeitraum: 01.07.2011 bis 31.10.2012(Hannover : Technische Informationsbibliothek (TIB), 2013) Herzel, Frank[no abstract available]