2019, Bateni, A., Erdem, E., Häßler, W., Somer, M.

Nano sized magnesium diboride (MgB2) samples were synthesized using various high-quality nano-B precursor powders. The microscopic defect structures of MgB2 samples were systematically investigated using X-ray powder diffraction, Raman, resistivity measurements and electron paramagnetic resonance spectroscopy. A significant deviation in the critical temperature Tc was observed due to defects and crystal distortion. The symmetry effect of the latter is also reflected on the vibrational modes in the Raman spectra. Scanning electron microscopy analysis demonstrate uniform and ultrafine morphology for the modified MgB2. Defect center in particular Mg vacancies influence the connectivity and the conductivity properties which are crucial for the superconductivity applications.

2016, Chabak, Kelson D., Moser, Neil, Green, Andrew J., Walker, Dennis E., Tetlak, Stephen E., Heller, Eric, Crespo, Antonio, Fitch, Robert, McCandless, Jonathan P., Leedy, Kevin, Baldini, Michele, Wagner, Gunter, Galazka, Zbigniew, Li, Xiuling, Jessen, Gregg

Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.

2023, Liu, Huimei, Hirschmann, Moritz M., Sawatzky, George A., Khaliullin, Giniyat, Schnyder, Andreas P.

SmB6 is a mixed-valence compound with flat f-electron bands that have a propensity to magnetism. Here, using a realistic Γ8 quartet model, we investigate the dynamical spin susceptibility and describe the in-gap collective mode observed in neutron scattering experiments. We show that as the Sm valence increases with pressure, the magnetic correlations enhance and SmB6 undergoes a first-order phase transition into a metallic antiferromagnetic state, whose symmetry depends on the model parameters. The magnetic orderings give rise to distinct band topologies: while the A-type order leads to an overlap between valence and conduction bands in the form of Dirac nodal lines, the G-type order has a negative indirect gap with weak Z2 indices. We also consider the spin polarized phase under a strong magnetic field, and find that it exhibits Weyl points as well as nodal lines close to the Fermi level. The magnetic phases show markedly different surface states and tunable bulk transport properties, with important implications for experiments. Our theory predicts that a magnetic order can be stabilized also by lifting the Γ8 cubic symmetry, thus explaining the surface magnetism reported in SmB6.

2021, Schäfer, Rudolf, Oppeneer, Peter M., Ognev, Alexey, Samardak, Alexander, Soldatov, Ivan V.

In conventional Kerr and Faraday microscopy, the sample is illuminated with plane-polarized light, and a magnetic domain contrast is generated by an analyzer making use of the Kerr or Faraday rotation. Here, we demonstrate possibilities of analyzer-free magneto-optical microscopy based on magnetization-dependent intensity modulations of the light. (i) The transverse Kerr effect can be applied for in-plane magnetized material, as demonstrated for an FeSi sheet. (ii) Illuminating that sample with circularly polarized light leads to a domain contrast with a different symmetry from the conventional Kerr contrast. (iii) Circular polarization can also be used for perpendicularly magnetized material, as demonstrated for garnet and ultrathin CoFeB films. (iv) Plane-polarized light at a specific angle can be employed for both in-plane and perpendicular media. (v) Perpendicular light incidence leads to a domain contrast on in-plane materials that is quadratic in the magnetization and to a domain boundary contrast. (vi) Domain contrast can even be obtained without a polarizer. In cases (ii) and (iii), the contrast is generated by magnetic circular dichroism (i.e., differential absorption of left- and right-circularly polarized light induced by magnetization components along the direction of light propagation), while magnetic linear dichroism (differential absorption of linearly polarized light induced by magnetization components transverse to propagation) is responsible for the contrast in case (v). The domain-boundary contrast is due to the magneto-optical gradient effect. A domain-boundary contrast can also arise by interference of phase-shifted magneto-optical amplitudes. An explanation of these contrast phenomena is provided in terms of Maxwell-Fresnel theory. © 2021 Author(s).

2021, Oka, T., Yamanaka, K., Sudo, K., Dadiel, L., Ogawa, J., Yokoyama, K., Häßler, W., Noudem, J., Berger, K., Sakai, N., Miryala, M., Murakami, M.

MgB2 superconducting bulk materials are characterized as simple and uniform metallic compounds, and capable of trapping field of non-distorted conical shapes. Although pulsed-field magnetization technique (PFM) is expected to be a cheap and an easy way to activate them, the heat generation due to the magnetic flux motion causes serious degradation of captured fields. The authors precisely estimated the flux trapping property of the bulk samples, found that the flux-shielding effect closely attributed to the sample dimensions. The magnetic field capturing of Ti-5.0wt% sample reached the highest value of 0.76 T. The applied field which reached the centre of the sample surface shifted from 1.0 T to 1.2 T with increasing sample thickness from 3.67 mm to 5.80 mm. This means that the shielding effect was enhanced with increasing the sample thickness. Moreover, Ti-addition affected the frequency of flux jump happenings. The occurrence of flux jumps was suppressed in 5.0wt%Ti-added sample. This means that the heat capacity of the compounds was promoted by Ti addition.