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Subject: Charge trapping ×

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    Influence of Surface Ligands on Charge-Carrier Trapping and Relaxation in Water-Soluble CdSe@CdS Nanorods
    (Basel : MDPI, 2020) Micheel, Mathias; Liu, Bei; Wächtler, Maria
    In this study, the impact of the type of ligand at the surface of colloidal CdSe@CdS dotin-rod nanostructures on the basic exciton relaxation and charge localization processes is closely examined. These systems have been introduced into the field of artificial photosynthesis as potent photosensitizers in assemblies for light driven hydrogen generation. Following photoinduced exciton generation, electrons can be transferred to catalytic reaction centers while holes localize into the CdSe seed, which can prevent charge recombination and lead to the formation of longlived charge separation in assemblies containing catalytic reaction centers. These processes are in competition with trapping processes of charges at surface defect sites. The density and type of surface defects strongly depend on the type of ligand used. Here we report on a systematic steadystate and time-resolved spectroscopic investigation of the impact of the type of anchoring group (phosphine oxide, thiols, dithiols, amines) and the bulkiness of the ligand (alkyl chains vs. poly(ethylene glycol) (PEG)) to unravel trapping pathways and localization efficiencies. We show that the introduction of the widely used thiol ligands leads to an increase of hole traps at the surface compared to trioctylphosphine oxide (TOPO) capped rods, which prevent hole localization in the CdSe core. On the other hand, steric restrictions, e.g., in dithiolates or with bulky side chains (PEG), decrease the surface coverage, and increase the density of electron trap states, impacting the recombination dynamics at the ns timescale. The amines in poly(ethylene imine) (PEI) on the other hand can saturate and remove surface traps to a wide extent. Implications for catalysis are discussed. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.
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    Occurrence of Flux Jumps in MgB2 Bulk Magnets during Pulse-Field Magnetization
    (Bristol : IOP Publ., 2020) Sakai, N.; Oka, T.; Yamanaka, K.; Dadiel, L.; Oki, H.; Ogawa, J.; Fukui, S.; Scheiter, J.; Häßler, W.; Yokoyama, K; Noudem, J.; Miryala, M.; Murakami, M.
    The magnetic flux capturing of MgB2 bulk magnets made by spark plasma sintering process has been precisely investigated to clarify the mechanism of flux motions during the pulse-field magnetization processes. The field trapping ratio B T/B P was evaluated as a key parameter of field trapping ability which strongly relates to the heat generation due to the rapid flux motion in the samples. The time dependence of magnetic flux density revealed the actual flux motion which penetrated the samples. The trapped fields B T and field trapping ratios B T/B P of various samples were classified into three regions of 'no flux flow', 'fast flux flow' and 'flux jump' according to the generation of heat and its propagation. A flux jump was observed late at 280 ms from the beginning of PFM process, while the field penetration B P showed its peak at 10 ms. Considering the heat propagation speed, the long-delayed flux jump should be attributed to the macroscopic barriers against the heat propagation to the surface centre of bulk magnet. © Published under licence by IOP Publishing Ltd.