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Subject: Compressive strain ×

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    Semimetal to semiconductor transition in Bi/TiO2 core/shell nanowires
    (Cambridge : Royal Society of Chemistry, 2021) Kockert, M.; Mitdank, R.; Moon, H.; Kim, J.; Mogilatenko, A.; Moosavi, S.H.; Kroener, M.; Woias, P.; Lee, W.; Fischer, S.F.
    We demonstrate the full thermoelectric and structural characterization of individual bismuth-based (Bi-based) core/shell nanowires. The influence of strain on the temperature dependence of the electrical conductivity, the absolute Seebeck coefficient and the thermal conductivity of bismuth/titanium dioxide (Bi/TiO2) nanowires with different diameters is investigated and compared to bismuth (Bi) and bismuth/tellurium (Bi/Te) nanowires and bismuth bulk. Scattering at surfaces, crystal defects and interfaces between the core and the shell reduces the electrical conductivity to less than 5% and the thermal conductivity to less than 25% to 50% of the bulk value at room temperature. On behalf of a compressive strain, Bi/TiO2 core/shell nanowires show a decreasing electrical conductivity with decreasing temperature opposed to that of Bi and Bi/Te nanowires. We find that the compressive strain induced by the TiO2 shell can lead to a band opening of bismuth increasing the absolute Seebeck coefficient by 10% to 30% compared to bulk at room temperature. In the semiconducting state, the activation energy is determined to |41.3 ± 0.2| meV. We show that if the strain exceeds the elastic limit the semimetallic state is recovered due to the lattice relaxation.
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    Strain-controlled switching kinetics of epitaxial PbZr0.52Ti0.48O3 films
    (Milton Park : Taylor & Francis, 2013) Herklotz, A.; Guo, E.-J.; Biegalski, M.D.; Christen, H.-M.; Schultz, L.; Dörr, K.
    We investigate the effect of biaxial strain on the switching of ferroelectric thin films. The strain state of epitaxial PbZr0.52Ti0.48O3 films is controlled directly and reversibly by the use of piezoelectric Pb(Mg1/3Nb2/3)0.72Ti0.28O3 (001) substrates. At small external electric fields, the films show switching characteristics consistent with a creep-like domain wall motion. In this regime, we find a huge decrease of the switching time under compressive strain. For larger external electric fields, the domain wall motion is in a depinning regime. The effect of compressive strain is more moderate in this region and shows a reduction in the switching kinetics.