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- ItemNumerical simulation of carrier transport in semiconductor devices at cryogenic temperatures(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Kantner, Markus; Koprucki, ThomasAt cryogenic temperatures the electron-hole plasma in semiconductor materials becomes strongly degenerate, leading to very sharp internal layers, extreme depletion in intrinsic domains and strong nonlinear diffusion. As a result, the numerical simulation of the drift-diffusion system suffers from serious convergence issues using standard methods. We consider a one-dimensional p-i-n diode to illustrate these problems and present a simple temperature-embedding scheme to enable the numerical simulation at cryogenic temperatures. The method is suitable for forward-biased devices as they appear e.g. in optoelectronic applications.