2016, Lee, Juhan, Krüner, Benjamin, Tolosa, Aura, Sathyamoorthi, Sethuraman, Kim, Daekyu, Choudhury, Soumyadip, Seo, Kum-Hee, Presser, Volker

We introduce a high performance hybrid electrochemical energy storage system based on an aqueous electrolyte containing tin sulfate (SnSO4) and vanadyl sulfate (VOSO4) with nanoporous activated carbon. The energy storage mechanism of this system benefits from the unique synergy of concurrent electric double-layer formation, reversible tin redox reactions, and three-step redox reactions of vanadium. The hybrid system showed excellent electrochemical properties such as a promising energy capacity (ca. 75 W h kg−1, 30 W h L−1) and a maximum power of up to 1.5 kW kg−1 (600 W L−1, 250 W m−2), exhibiting capacitor-like galvanostatic cycling stability and a low level of self-discharging rate.

2017, Hilmi, Isom, Lotnyk, Andriy, Gerlach, Jürgen W., Schumacher, Philipp, Rauschenbach, Bernd

An attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered) chalcogenide material with van-der-Waals (vdW) epitaxy is of strong interest for non-volatile memory application. In this paper, the epitaxial growth of an exemplary layered chalcogenide material, i.e., stoichiometric Sb2Te3 thin films, is reported. The films were produced on unreconstructed highly lattice-mismatched Si(111) substrates by pulsed laser deposition (PLD). The films were grown by vdW epitaxy in a two-dimensional mode. X-ray diffraction measurements and transmission electron microscopy revealed that the films possess a trigonal Sb2Te3 structure. The single atomic Sb/Te termination layer on the Si surface was formed initializing the thin film growth. This work demonstrates a straightforward method to deposit vdW-epitaxial layered chalcogenides and, at the same time, opens up the feasibility to fabricate chalcogenide vdW heterostructures by PLD.