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Subject: Defects × WGL Institute: IFWD ×

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Now showing 1 - 4 of 4
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    High-quality MgB2 nanocrystals synthesized by using modified amorphous nano-boron powders: Study of defect structures and superconductivity properties
    (College Park, MD : American Institute of Physics, 2019) Bateni, A.; Erdem, E.; Häßler, W.; Somer, M.
    Nano sized magnesium diboride (MgB2) samples were synthesized using various high-quality nano-B precursor powders. The microscopic defect structures of MgB2 samples were systematically investigated using X-ray powder diffraction, Raman, resistivity measurements and electron paramagnetic resonance spectroscopy. A significant deviation in the critical temperature Tc was observed due to defects and crystal distortion. The symmetry effect of the latter is also reflected on the vibrational modes in the Raman spectra. Scanning electron microscopy analysis demonstrate uniform and ultrafine morphology for the modified MgB2. Defect center in particular Mg vacancies influence the connectivity and the conductivity properties which are crucial for the superconductivity applications.
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    Erratum: Exploring the 3D structure and defects of a self-assembled gold mesocrystal by coherent X-ray diffraction imaging (Nanoscale (2021) DOI: 10.1039/D1NR01806J)
    (Cambridge : RSC Publ., 2021) Carnis, Jerome; Kirner, Felizitas; Lapkin, Dmitry; Sturm, Sebastian; Kim, Young Yong; Baburin, Igor A.; Khubbutdinov, Ruslan; Ignatenko, Alexandr; Iashina, Ekaterina; Mistonov, Alexander; Steegemans, Tristan; Wieck, Thomas; Gemming, Thomas; Lubk, Axel; Lazarev, Sergey; Sprung, Michael; Vartanyants, Ivan A.; Sturm, Elena V.
    Correction for ‘Exploring the 3D structure and defects of a self-assembled gold mesocrystal by coherent X-ray diffraction imaging’ by Jerome Carnis et al., Nanoscale, 2021, DOI: 10.1039/D1NR01806J.
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    Microstructural defects in hot deformed and as-transformed τ-MnAl-C
    (Lausanne : Elsevier, 2021) Zhao, P.; Feng, L.; Nielsch, K.; Woodcock, T.G.
    In this study, detailed microstructural characterisation has been conducted in both as-transformed and hot deformed samples of τ-MnAl-C using transmission electron microscopy. After hot deformation, true twins, dislocations, intrinsic stacking faults and precipitates of Mn3AlC are the main defects in the recrystallised grains. True twins and order twins were distinguished based on differences in their diffraction patterns. A significant fraction of non-recrystallised grains existed, which had microstructures based on combinations of high densities of true twins, dislocations, and deformation bands. The formation of the Mn3AlC precipitates was confirmed and related to the reduction of saturation magnetization and the increase in the Curie temperature of τ-MnAl-C after hot deformation. Antiphase boundaries, which are believed to act as nucleation sites for reverse domains, were not observed in the hot deformed sample.
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    Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes
    (New York, NY [u.a.] : Springer, 2012) Rodriguez, R.D.; Sheremet, E.; Thurmer, D.J.; Lehmann, D.; Gordan, O.D.; Seidel, F.; Milekhin, A.; Schmidt, O.G.; Hietschold, M.; Zahn, D.R.T.
    Large arrays of multifunctional rolled-up semiconductors can be mass-produced with precisely controlled size and composition, making them of great technological interest for micro- and nano-scale device fabrication. The microtube behavior at different temperatures is a key factor towards further engineering their functionality, as well as for characterizing strain, defects, and temperature-dependent properties of the structures. For this purpose, we probe optical phonons of GaAs/InGaAs rolled-up microtubes using Raman spectroscopy on defect-rich (faulty) and defect-free microtubes. The microtubes are fabricated by selectively etching an AlAs sacrificial layer in order to release the strained InGaAs/GaAs bilayer, all grown by molecular beam epitaxy. Pristine microtubes show homogeneity of the GaAs and InGaAs peak positions and intensities along the tube, which indicates a defect-free rolling up process, while for a cone-like microtube, a downward shift of the GaAs LO phonon peak along the cone is observed. Formation of other type of defects, including partially unfolded microtubes, can also be related to a high Raman intensity of the TO phonon in GaAs. We argue that the appearance of the TO phonon mode is a consequence of further relaxation of the selection rules due to the defects on the tubes, which makes this phonon useful for failure detection/prediction in such rolled up systems. In order to systematically characterize the temperature stability of the rolled up microtubes, Raman spectra were acquired as a function of sample temperature up to 300°C. The reversibility of the changes in the Raman spectra of the tubes within this temperature range is demonstrated.