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- ItemGranular metal-carbon nanocomposites as piezoresistive sensor films - Part 1: Experimental results and morphology(Göttingen : Copernicus Publ., 2018) Schultes, Günter; Schmid-Engel, Hanna; Schwebke, Silvan; Werner, UlfWe have produced granular films based on carbon and different transition metals by means of plasma deposition processes. Some of the films possess an increased strain sensitivity compared to metallic films. They respond to strain almost linearly with gauge factors of up to 30 if strained longitudinally, while in the transverse direction about half of the effect is still measured. In addition, the film's thermal coefficient of resistance is adjustable by the metal concentration. The influence of metal concentration was investigated for the elements Ni, Pd, Fe, Pt, W, and Cr, while the elements Co, Au, Ag, Al, Ti, and Cu were studied briefly. Only Ni and Pd have a pronounced strain sensitivity at 55- €±- €5- €at.- €% (atomic percent) of metal, among which Ni–C is far more stable. Two phases are identified by transmission electron microscopy and X-ray diffraction: metal-containing nanocolumns densely packed in a surrounding carbon phase. We differentiate three groups of metals, due to their respective affinity to carbon. It turns out that only nickel has the capability to bond and form a stable and closed encapsulation of GLC around each nanoparticle. In this structure, the electron transport is in part accomplished by tunneling processes across the basal planes of the graphitic encapsulation. Hence, we hold these tunneling processes responsible for the increased gauge factors of Ni–C composites. The other elements are unable to form graphitic encapsulations and thus do not exhibit elevated gauge factors.
- ItemSubstrate-orientation dependence of β -Ga2O3 (100), (010), (001), and (2 ̄ 01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)(Melville, NY : AIP Publ., 2020) Mazzolini, P.; Falkenstein, A.; Wouters, C.; Schewski, R.; Markurt, T.; Galazka, Z.; Martin, M.; Albrecht, M.; Bierwagen, O.We experimentally demonstrate how In-mediated metal-exchange catalysis (MEXCAT) allows us to widen the deposition window for β-Ga2O3 homoepitaxy to conditions otherwise prohibitive for its growth via molecular beam epitaxy (e.g., substrate temperatures ≥800 °C) on the major substrate orientations, i.e., (010), (001), (2⎯⎯01), and (100) 6°-offcut. The obtained crystalline qualities, surface roughnesses, growth rates, and In-incorporation profiles are shown and compared with different experimental techniques. The growth rates, Γ, for fixed growth conditions are monotonously increasing with the surface free energy of the different orientations with the following order: Γ(010) > Γ(001) > Γ(2⎯⎯01) > Γ(100). Ga2O3 surfaces with higher surface free energy provide stronger bonds to the surface ad-atoms or ad-molecules, resulting in decreasing desorption, i.e., a higher incorporation/growth rate. The structural quality in the case of (2⎯⎯01), however, is compromised by twin domains due to the crystallography of this orientation. Notably, our study highlights β-Ga2O3 layers with high structural quality grown by MEXCAT-MBE not only in the most investigated (010) orientation but also in the (100) and (001) ones. In particular, MEXCAT on the (001) orientation results in both growth rate and structural quality comparable to the ones achievable with (010), and the limited incorporation of In associated with the MEXCAT deposition process does not change the insulating characteristics of unintentionally doped layers. The (001) surface is therefore suggested as a valuable alternative orientation for devices.