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Subject: Digital storage × WGL Institute: IOM ×

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Now showing 1 - 3 of 3
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    Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition
    (Melville, NY : AIP Publ., 2017) Hilmi, Isom; Lotnyk, Andriy; Gerlach, Jürgen W.; Schumacher, Philipp; Rauschenbach, Bernd
    An attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered) chalcogenide material with van-der-Waals (vdW) epitaxy is of strong interest for non-volatile memory application. In this paper, the epitaxial growth of an exemplary layered chalcogenide material, i.e., stoichiometric Sb2Te3 thin films, is reported. The films were produced on unreconstructed highly lattice-mismatched Si(111) substrates by pulsed laser deposition (PLD). The films were grown by vdW epitaxy in a two-dimensional mode. X-ray diffraction measurements and transmission electron microscopy revealed that the films possess a trigonal Sb2Te3 structure. The single atomic Sb/Te termination layer on the Si surface was formed initializing the thin film growth. This work demonstrates a straightforward method to deposit vdW-epitaxial layered chalcogenides and, at the same time, opens up the feasibility to fabricate chalcogenide vdW heterostructures by PLD.
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    Photoemission electron microscopy of magneto-ionic effects in La0.7Sr0.3MnO3
    (Melville, NY : AIP Publ., 2020) Wilhelm, Marek; Giesen, Margret; Duchoň, Tomáš; Moors, Marco; Mueller, David N.; Hackl, Johanna; Baeumer, Christoph; Hamed, Mai Hussein; Cao, Lei; Zhang, Hengbo; Petracic, Oleg; Glöß, Maria; Cramm, Stefan; Nemšák, Slavomír; Wiemann, Carsten; Dittmann, Regina; Schneider, Claus M.; Müller, Martina
    Magneto-ionic control of magnetism is a promising route toward the realization of non-volatile memory and memristive devices. Magneto-ionic oxides are particularly interesting for this purpose, exhibiting magnetic switching coupled to resistive switching, with the latter emerging as a perturbation of the oxygen vacancy concentration. Here, we report on electric-field-induced magnetic switching in a La0.7Sr0.3MnO3 (LSMO) thin film. Correlating magnetic and chemical information via photoemission electron microscopy, we show that applying a positive voltage perpendicular to the film surface of LSMO results in the change in the valence of the Mn ions accompanied by a metal-to-insulator transition and a loss of magnetic ordering. Importantly, we demonstrate that the voltage amplitude provides granular control of the phenomena, enabling fine-tuning of the surface electronic structure. Our study provides valuable insight into the switching capabilities of LSMO that can be utilized in magneto-ionic devices. © 2020 Author(s).
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    Systematic tuning of segmented magnetic nanowires into three-dimensional arrays of 'bits'
    (London : RSC Publishing, 2017) Bochmann, S.; Fernandez-Pacheco, A.; Mačković, M.; Neff, A.; Siefermann, K.R.; Spiecker, E.; Cowburn, R.P.; Bachmann, J.
    A method is presented for the preparation of a three-dimensional magnetic data storage material system. The major ingredients are an inert nanoporous matrix prepared by anodization and galvanic plating of magnetic and non-magnetic metals in wire shape inside the cylindrical pores. The individual nanomagnets consist of a nickel-cobalt alloy, the composition of which is tuned systematically by adjusting the electrolytic bath composition at one optimal applied potential. The lowest magnetocrystalline anisotropy is obtained at the composition Ni60Co40, as quantified by superconducting quantum interference device magnetometry. Wires of this composition experience a pinning-free propagation of magnetic domain walls, as determined by single-wire magneto-optical Kerr effect magnetometry. Adding copper into the electrolyte allows one to generate segments of Ni60Co40 separated by non-magnetic copper. The segment structure is apparent in individual nanowires imaged by scanning electron microscopy, UV-photoelectron emission microscopy, and transmission electron microscopy. The single-domain structure of the wire segments is evidenced by magnetic force microscopy.