2020, Krautz, M., Beyer, L., Funk, A., Waske, A., Weise, B., Freudenberger, J., Gottschall, T.

Magnetocaloric composite wires have been studied by pulsed-field measurements up to μ0ΔH = 10 T with a typical rise time of 13 ms in order to evaluate the evolution of the adiabatic temperature change of the core, ΔTad, and to determine the effective temperature change at the surrounding steel jacket, ΔTeff, during the field pulse. An inverse thermal hysteresis is observed for ΔTad due to the delayed thermal transfer. By numerical simulations of application-relevant sinusoidal magnetic field profiles, it can be stated that for field-frequencies of up to two field cycles per second heat can be efficiently transferred from the core to the outside of the jacket. In addition, intense numerical simulations of the temperature change of the core and jacket were performed by varying different parameters, such as frequency, heat capacity, thermal conductivity and interface resistance in order to shed light on their impact on ΔTeff at the outside of the jacket in comparison to ΔTad provided by the core.

2014, Pavlov, S.G., Deßmann, N., Shastin, V.N., Zhukavin, R.K., Redlich, B., van der Meer, A.F.G., Mittendorff, M., Winnerl, S., Abrosimov, N.V., Riemann, H., Hübers, H.-W.

Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on the 1Λ8+ → 1Λ7- , 1Λ6-, 1Λ8- intracenter transitions with a midinfrared free-electron laser. Lasing occurs on two intracenter transitions around 1.75 THz. The upper laser levels are the 1Λ7- , 1Λ6- , and 1Λ8- states, and the lower laser level for both emission lines is the 2Λ8+ state. In contrast to n-type intracenter silicon lasers, boron-doped silicon lasers do not involve the excited states with the longest lifetimes. Instead, the absorption cross section for the pump radiation is the dominating factor. The four-level lasing scheme implies that the deepest even-parity boron state is the 2Λ8+ state and not the 1Λ7+ split-off ground state, as indicated by other experiments. This is confirmed by infrared absorption spectroscopy of Si:B.