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Subject: Electron transport ×

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Now showing 1 - 4 of 4
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    Enhanced reliability of drift-diffusion approximation for electrons in fluid models for nonthermal plasmas
    (New York, NY : American Inst. of Physics, 2013) Becker, M.M.; Loffhagen, D.
    Common fluid models used for the description of electron transport in nonthermal discharge plasmas are subject to substantial restrictions if the electron energy transport significantly influences the discharge behaviour. A drift-diffusion approach is presented which is based on a multiterm approximation of the electron velocity distribution function and overcomes some of these restrictions. It is validated using a benchmark model and applied for the analysis of argon discharge plasmas at low and atmospheric pressure. The results are compared to those of common drift-diffusion models as well as to experimental data. It is pointed out that fluid models are able to describe nonlocal phenomena caused by electron energy transport, if the energy transport is consistently described. Numerical difficulties that frequently occur when the conventional drift-diffusion model is consistently applied are avoided by the proposed method.
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    Granular metal-carbon nanocomposites as piezoresistive sensor films - Part 1: Experimental results and morphology
    (Göttingen : Copernicus Publ., 2018) Schultes, Günter; Schmid-Engel, Hanna; Schwebke, Silvan; Werner, Ulf
    We have produced granular films based on carbon and different transition metals by means of plasma deposition processes. Some of the films possess an increased strain sensitivity compared to metallic films. They respond to strain almost linearly with gauge factors of up to 30 if strained longitudinally, while in the transverse direction about half of the effect is still measured. In addition, the film's thermal coefficient of resistance is adjustable by the metal concentration. The influence of metal concentration was investigated for the elements Ni, Pd, Fe, Pt, W, and Cr, while the elements Co, Au, Ag, Al, Ti, and Cu were studied briefly. Only Ni and Pd have a pronounced strain sensitivity at 55- €±- €5- €at.- €% (atomic percent) of metal, among which Ni–C is far more stable. Two phases are identified by transmission electron microscopy and X-ray diffraction: metal-containing nanocolumns densely packed in a surrounding carbon phase. We differentiate three groups of metals, due to their respective affinity to carbon. It turns out that only nickel has the capability to bond and form a stable and closed encapsulation of GLC around each nanoparticle. In this structure, the electron transport is in part accomplished by tunneling processes across the basal planes of the graphitic encapsulation. Hence, we hold these tunneling processes responsible for the increased gauge factors of Ni–C composites. The other elements are unable to form graphitic encapsulations and thus do not exhibit elevated gauge factors.
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    Granular metal-carbon nanocomposites as piezoresistive sensor films-Part 2: Modeling longitudinal and transverse strain sensitivity
    (Göttingen : Copernicus Publ., 2018) Schwebke, Silvan; Werner, Ulf; Schultes, Günter
    Granular and columnar nickel-carbon composites may exhibit large strain sensitivity, which makes them an interesting sensor material. Based on experimental results and morphological characterization of the material, we develop a model of the electron transport in the film and use it to explain its piezoresistive effect. First we describe a model for the electron transport from particle to particle. The model is then applied in Monte Carlo simulations of the resistance and strain properties of the disordered films that give a first explanation of film properties. The simulations give insights into the origin of the transverse sensitivity and show the influence of various parameters such as particle separation and geometric disorder. An important influence towards larger strain sensitivity is local strain enhancement due to different elastic moduli of metal particles and carbon matrix.
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    From atomistic tight-binding theory to macroscale drift–diffusion: Multiscale modeling and numerical simulation of uni-polar charge transport in (In,Ga)N devices with random fluctuations
    (Melville, NY : American Inst. of Physics, 2021) O’Donovan, Michael; Chaudhuri, Debapriya; Streckenbach, Timo; Farrell, Patricio; Schulz, Stefan; Koprucki, Thomas
    Random alloy fluctuations significantly affect the electronic, optical, and transport properties of (In,Ga)N-based optoelectronic devices. Transport calculations accounting for alloy fluctuations currently use a combination of modified continuum-based models, which neglect to a large extent atomistic effects. In this work, we present a model that bridges the gap between atomistic theory and macroscopic transport models. To do so, we combine atomistic tight-binding theory and continuum-based drift–diffusion solvers, where quantum corrections are included via the localization landscape method. We outline the ingredients of this framework in detail and present first results for uni-polar electron transport in single and multi- (In,Ga)N quantum well systems. Overall, our results reveal that both random alloy fluctuations and quantum corrections significantly affect the current–voltage characteristics of uni-polar electron transport in such devices. However, our investigations indicate that the importance of quantum corrections and random alloy fluctuations can be different for single and multi-quantum well systems.