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Subject: Epitaxially grown × WGL Institute: IFWD ×

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Now showing 1 - 2 of 2
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    Optical properties of individual site-controlled Ge quantum dots
    (Melville, NY : American Inst. of Physics, 2015) Grydlik, Martyna; Brehm, Moritz; Tayagaki, Takeshi; Langer, Gregor; Schmidt, Oliver G.; Schäffler, Friedrich
    We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem. This work was supported by the Austrian Science Funds (FWF) via Schrödinger Scholarship J3328-N19 and the Project Nos. F2502-N17 and F2512-N17 of SFB025: IRON. M.G. and O.G.S. acknowledge support from the Center for Advancing Electronics Dresden, CfAED. T.T. was supported by the ICR-KU International Short-term Exchange Program for Young Researchers. The authors thank T. Fromherz and F. Hackl for helpful discussions.
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    Tuning functional properties by plastic deformation
    (Milton Park : Taylor & Francis, 2009) Kwon, A.R.; Neu, V.; Matias, V.; Hänisch, J.; Hühne, R.; Freudenberger, J.; Holzapfel, B.; Schultz, L.; Fähler, S.
    It is well known that a variation of lattice constants can strongly influence the functional properties of materials. Lattice constants can be influenced by external forces; however, most experiments are limited to hydrostatic pressure or biaxial stress. Here, we present an experimental approach that imposes a large uniaxial strain on epitaxially grown films in order to tune their functional properties. A substrate made of a ductile metal alloy covered with a biaxially oriented MgO layer is used as a template for growth of epitaxial films. By applying an external plastic strain, we break the symmetry within the substrate plane compared to the as-deposited state. The consequences of 2% plastic strain are examined for an epitaxial hard magnetic Nd2Fe14B film and are found to result in an elliptical distortion of the in-plane anisotropy below the spin-reorientation temperature. Our approach is a versatile method to study the influence of large plastic strain on various materials, as the MgO(001) layer used is a common substrate for epitaxial growth.