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In situ surface acoustic wave field probing in microfluidic structures using optical transmission interferometry
2021, Weser, R., Schmidt, H.
The generation of mechanical driving forces in fluids at the microscale can be efficiently realized using acoustic actuators. For this purpose, bulk or surface acoustic waves (SAWs) are typically excited by an electroacoustic transducer, and the acoustic energy is subsequently coupled to the fluid. The resultant acoustic pressure field in the fluid allows for precise manipulation of immersed objects and also for the agitation of the fluid itself. In general, the fluidic actuation capability is mainly determined by the mechanical displacement amplitude at the interface between the fluid and the acoustically active surface. In the case of SAW-based actuators, the fluid most often is directly attached to the substrate surface along which the surface waves propagate. Hence, the lateral distribution of surface displacement amplitude, i.e., the surface acoustic wave field, at the fluid–substrate interface is of particular interest in order to achieve full control of the fluidic actuation. Here, we present a reliable experimental method for the in situ determination of the SAW field on fluid loaded substrate surfaces based on laser interferometry. The optical accessibility of the fluid–substrate interface is realized via transmission through the anisotropic, piezoelectric substrate material requiring only an additional calibration procedure in order to compensate the parasitic influence of effects based on different indices of refraction as well as on complex acousto-optic effects. Finally, the proposed method is demonstrated to yield reliable results of displacement amplitude on the fluid loaded surface and thus, to provide a valuable insight into acoustofluidic coupling that was not available so far.
Contactless processing of SiGe-melts in EML under reduced gravity
2016, Luo, Yuansu, Damaschke, Bernd, Schneider, Stephan, Lohöfer, Georg, Abrosimov, Nikolay, Czupalla, Matthias, Samwer, Konrad
The processing of semiconductors based on electromagnetic levitation is a challenge, because this kind of materials shows a poor electrical conductivity. Here, we report the results of measurements of the thermophysical properties obtained recently from highly doped semiconductors Si1-x Ge x under microgravity conditions in the framework of parabola flight campaigns. Due to the limited time of about 20 s of microgravity especially Ge-rich samples with low melting temperatures were investigated. The measurements were performed contactlessly by video techniques with subsequent digital image processing. Linear and volume thermal expansion coefficients were measured hereby from image data. An anomaly of volume changes near the solidus temperature is visible. Viscosity and surface tension were determined by the oscillating drop technique using optic and electronic data. It was observed that the alloying of Si into Ge increases the surface tension of the melts. The viscosity is following an Arrhenius equation and shows a crossover temperature which separates simple liquid at high temperatures from cooperative liquid at low temperatures.