Filters

2015 - 201912020 - 20211

More filters

20222
Reset filters

Settings

Subject: Grown crystals × WGL Institute: IKZ ×

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item
    Crystal growth and thermodynamic investigation of Bi2M2+O4 (M = Pd, Cu)
    (London : RSC, 2021) Wolff, Nora; Klimm, Detlef; Habicht, Klaus; Fritsch, Katharina
    Phase equilibria that are relevant for the growth of Bi2MO4 have been studied experimentally, and the ternary phase diagrams of Bi2O3–PdO2–Pd and Bi2O3–Cu2O–CuO and its isopleth section Bi2O3–CuO were redetermined. It is shown that every melting and crystallization process is always accompanied by a redox process at the phase boundary and that for both title compounds, the valence of the transition metal is lowered during melting. Vice versa, during crystal growth, O2 must be transported through the melt to the phase boundary. Based on these new insights provided by our thermodynamic studies, Bi2CuO4 single crystals with a length of up to 7 cm and a diameter of 6 mm were grown by the OFZ technique to be used for investigations of magnetic, electronic and thermal transport properties. The grown crystals were characterized by powder X-ray diffraction, Laue, magnetization and specific heat measurements.
  • Thumbnail Image
    Item
    Study on the Properties of High Purity Germanium Crystals
    (Bristol : IOP Publ., 2015) Yang, G.; Mei, H.; Guan, Y.T.; Wang, G.J.; Mei, D.M.; Irmscher, K.
    In the crystal growth lab of South Dakota University, we are growing high purity germanium (HPGe) crystals and using the grown crystals to make radiation detectors. As the detector grade HPGe crystals, they have to meet two critical requirements: an impurity level of ∼109 to 10 atoms /cm3 and a dislocation density in the range of ∼102 to 104 / cm3. In the present work, we have used the following four characterization techniques to investigate the properties of the grown crystals. First of all, an x-ray diffraction method was used to determine crystal orientation. Secondly, the van der Pauw Hall effect measurement was used to measure the electrical properties. Thirdly, a photo-thermal ionization spectroscopy (PTIS) was used to identify what the impurity atoms are in the crystal. Lastly, an optical microscope observation was used to measure dislocation density in the crystal. All of these characterization techniques have provided great helps to our crystal activities.