2015, Dau, M.T., Jenichen, B., Herfort, J.

Investigation of the thickness dependence of the magnetic anisotropy in B2-type Co2TiSi films on GaAs(001), shows a pronounced perpendicular magnetic anisotropy at 10 K for thicknesses up to 13.5 nm. We have evidenced that the interfacial anisotropy induced by interface clusters has a strong influence on the perpendicular magnetic anisotropy of this hybrid structure, especially at temperatures lower than the blocking temperature of the clusters (28 K). However, as this influence can be ruled out at higher temperatures, the perpendicular magnetic anisotropy which is found to persist up to room-temperature can be ascribed to the magnetic properties of the Co2TiSi films. For thicknesses larger than 15.0 nm, we observe an alignment of the magnetic easy axis parallel to the sample surface, which is most likely due to the shape anisotropy and the film structure.

2014, Guo, E.J., Das, S., Herklotz, A.

The effect of a magnetic field on the ferroelectric switching kinetics of BiFeO3 (BFO) capacitors with La0.8Ca0.2MnO3 (LCMO) bottom electrode and Pt top contact has been investigated. We find a strong dependence of the remnant polarization and coercive field on the magnetic field. The switching time can be systematically tuned by magnetic field and reaches a tenfold reduction around the Curie temperature of LCMO at 4 T. We attribute this behavior to the splitting of the voltage drops across the BFO film and the LCMO bottom electrode, which can be strongly influenced by an external magnetic field due to the magnetoresistance. Further experiments on the BFO capacitors with SrRuO3 bottom electrodes show little magnetic field dependence of ferroelectric switching confirming our interpretation. Our results provide an efficient route to control the ferroelectric switching speed through the magnetic field, implying potential application in multifunctional devices.

2016, Duschek, K., Pohl, D., Fähler, S., Nielsch, K., Leistner, K.

Electric field control of magnetization and anisotropy in layered structures with perpendicular magnetic anisotropy is expected to increase the versatility of spintronic devices. As a model system for reversible voltage induced changes of magnetism by magnetoionic effects, we present several oxide/metal heterostructures polarized in an electrolyte. Room temperature magnetization of Fe-O/Fe layers can be changed by 64% when applying only a few volts in 1M KOH. In a next step, the bottom interface of the in-plane magnetized Fe layer is functionalized by an L10 FePt(001) underlayer exhibiting perpendicular magnetic anisotropy. During subsequent electrocrystallization and electrooxidation, well defined epitaxial Fe3O4/Fe/FePt heterostructures evolve. The application of different voltages leads to a thickness change of the Fe layer sandwiched between Fe-O and FePt. At the point of transition between rigid magnet and exchange spring magnet regime for the Fe/FePt bilayer, this induces a large variation of magnetic anisotropy.