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Subject: Magnetic materials × Subject: Phase transitions ×

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    Phase transition and anomalous low temperature ferromagnetic phase in Pr 0.6Sr 0.4MnO 3 single crystals
    (New York, NY : Springer Science + Business Media B.V., 2009) Rößler, S.; Harikrishnan, S.; Naveen Kumar, C.M.; Bhat, H.L.; Elizabeth, S.; Rößler, U.K.; Steglich, F.; Wirth, S.
    We report on the magnetic and electrical properties of Pr 0.6Sr 0.4MnO 3 single crystals. This compound undergoes a continuous paramagnetic-ferromagnetic transition with a Curie temperature T C301 K and a first-order structural transition at T S64 K. At T S, the magnetic susceptibility exhibits an abrupt jump, and a corresponding small hump is seen in the resistivity. The critical behavior of the static magnetization and the temperature dependence of the resistivity are consistent with the behavior expected for a nearly isotropic ferromagnet with short-range exchange belonging to the Heisenberg universality class. The magnetization (M-H) curves below T S are anomalous in that the virgin curve lies outside the subsequent M-H loops. The hysteretic structural transition at T S as well as the irreversible magnetization processes below T S can be explained by phase separation between a high-temperature orthorhombic and a low-temperature monoclinic ferromagnetic phase.
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    Ferroelectric switching in epitaxial GeTe films
    (New York : American Institute of Physics, 2014) Kolobov, A.V.; Kim, D.J.; Giussani, A.; Fons, P.; Tominaga, J.; Calarco, R.; Gruverman, A.
    In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.