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- ItemDetection of antiskyrmions by topological Hall effect in Heusler compounds(Woodbury, NY : Inst., 2020) Kumar, Vivek; Kumar, Nitesh; Reehuis, Manfred; Gayles, Jacob; Sukhanov, A.S.; Hoser, Andreas; Damay, Françoise; Shekhar, Chandra; Adler, Peter; Felser, ClaudiaHeusler compounds having D2d crystal symmetry gained much attention recently due to the stabilization of a vortexlike spin texture called antiskyrmions in thin lamellae of Mn1.4Pt0.9Pd0.1Sn as reported in the work of Nayak et al. [Nature (London) 548, 561 (2017)10.1038/nature23466]. Here we show that bulk Mn1.4Pt0.9Pd0.1Sn undergoes a spin-reorientation transition from a collinear ferromagnetic to a noncollinear configuration of Mn moments below 135 K, which is accompanied by the emergence of a topological Hall effect. We tune the topological Hall effect in Pd and Rh substituted Mn1.4PtSn Heusler compounds by changing the intrinsic magnetic properties and spin textures. A unique feature of the present system is the observation of a zero-field topological Hall resistivity with a sign change which indicates the robust formation of antiskyrmions. © 2020 authors. Published by the American Physical Society.
- ItemTopological Hall effect in thin films of Mn1.5PtSn(College Park, MD : APS, 2019) Swekis, Peter; Markou, Anastasios; Kriegner, Dominik; Gayles, Jacob; Schlitz, Richard; Schnelle, Walter; Goennenwein, Sebastian T.B.; Felser, ClaudiaSpin chirality in metallic materials with noncoplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn1.5PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to μ0H≈4T below the spin reorientation transition temperature, Ts=185 K. We find that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn2-xPtSn by extracting the effect for multiple stoichiometries (x=0.5,0.25,0.1) and film thicknesses (t=104,52,35 nm) with maximum topological Hall resistivities between 0.76 and 1.55μΩcm at 150 K. © 2019 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
- ItemMagnetization-driven Lifshitz transition and charge-spin coupling in the kagome metal YMn6Sn6(London : Springer Nature, 2022) Siegfried, Peter E.; Bhandari, Hari; Jones, David C.; Ghimire, Madhav P.; Dally, Rebecca L.; Poudel, Lekh; Bleuel, Markus; Lynn, Jeffrey W.; Mazin, Igor I.; Ghimire, Nirmal J.The Fermi surface (FS) is essential for understanding the properties of metals. It can change under both conventional symmetry-breaking phase transitions and Lifshitz transitions (LTs), where the FS, but not the crystal symmetry, changes abruptly. Magnetic phase transitions involving uniformly rotating spin textures are conventional in nature, requiring strong spin-orbit coupling (SOC) to influence the FS topology and generate measurable properties. LTs driven by a continuously varying magnetization are rarely discussed. Here we present two such manifestations in the magnetotransport of the kagome magnet YMn6Sn6: one caused by changes in the magnetic structure and another by a magnetization-driven LT. The former yields a 10% magnetoresistance enhancement without a strong SOC, while the latter a 45% reduction in the resistivity. These phenomena offer a unique view into the interplay of magnetism and electronic topology, and for understanding the rare-earth counterparts, such as TbMn6Sn6, recently shown to harbor correlated topological physics.
- ItemMagnetically induced reorientation of martensite variants in constrained epitaxial Ni-Mn-Ga films grown on MgO(001)(Milton Park : Taylor & Francis, 2008) Thomas, M.; Heczko, O.; Buschbeck, J.; Rößler, U.K.; McCord, J.; Scheerbaum, N.; Schultz, L.; Fähler, S.Magnetically induced reorientation (MIR) is observed in epitaxial orthorhombic Ni-Mn-Ga films. Ni-Mn-Ga films have been grown epitaxially on heated MgO(001) substrates in the cubic austenite state. The unit cell is rotated by 45° relative to the MgO cell. The growth, structure texture and anisotropic magnetic properties of these films are described. The crystallographic analysis of the martensitic transition reveals variant selection dominated by the substrate constraint. The austenite state has low magnetocrystalline anisotropy. In the martensitic state, the magnetization curves reveal an orthorhombic symmetry having three magnetically non-equivalent axes. The existence of MIR is deduced from the typical hysteresis within the first quadrant in magnetization curves and independently by texture measurement without and in the presence of a magnetic field probing micro structural changes. An analytical model is presented, which describes MIR in films with constrained overall extension by the additional degree of freedom of an orthorhombic structure compared to the tetragonal structure used in the standard model.
- ItemThickness dependence of the anomalous Nernst effect and the Mott relation of Weyl semimetal Co2MnGa thin films(College Park, MD : American Physical Society, 2020) Park, G.-H.; Reichlova, H.; Schlitz, R.; Lammel, M.; Markou, A.; Swekis, P.; Ritzinger, P.; Kriegner, D.; Noky, J.; Gayles, J.; Sun, Y.; Felser, C.; Nielsch, K.; Goennenwein, S.T.B.; Thomas, A.We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 μV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magnetothermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magnetothermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness.