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Scalable, high power line focus diode laser for crystallizing of silicon thin films
We present the design and performance of a diode laser module producing a high intensity line focus at 808 nm for material processing. The design is based on a linear array of 7 laser bars and beam forming optics featuring a micro-optic homogenizer. The module delivers a total output power of 900 W at 140 A and peak intensity created in the focus area of 10.3 kW/cm2. Two systems with line length of 5 cm and 10 cm at a large working distance of 110 mm have been realized. The chosen concept allows scaling in length by joining multiple modules which is of interest for material processing in industrial applications. Application results from laser crystallization of amorphous silicon seed layers used in the fabrication of photovoltaic cells for solar panels are given.
Monitoring of evolving laser induced periodic surface structures
Laser induced periodic surface structures (LIPSS) are generated on titanium and silicon nitride surfaces by multiple femtosecond laser pulses. An optical imaging system is used to observe the backscattered light during the patterning process. A characteristic fringe pattern in the backscattered light is observed and evidences the surface modification. Experiments are complemented by finite difference time domain numerical simulations which clearly show that the periodic surface modulation leads to characteristic modulations in the coherently scattered light field. It is proposed that these characteristic fringe pattern can be used as a very fast and low-cost monitor of LIPSS formation formation during the manufacturing process. © 2019 by the authors.