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    783 nm wavelength stabilized DBR tapered diode lasers with a 7 W output power
    (Washington, DC : The Optical Society, 2021) Sumpf, Bernd; Theurer, Lara Sophie; Maiwald, Martin; Müller, André; Maaßdorf, André; Fricke, Jörg; Ressel, Peter; Tränkle, Günther
    Wavelength stabilized distributed Bragg reflector (DBR) tapered diode lasers at 783 nm will be presented. The devices are based on GaAsP single quantum wells embedded in a large optical cavity leading to a vertical far field angle of about 29◦ (full width at half maximum). The 3-inch (7.62 cm) wafers are grown using metalorganic vapor phase epitaxy. In a full wafer process, 4 mm long DBR tapered lasers are manufactured. The devices consist of a 500 µm long 10th order surface DBR grating that acts as rear side mirror. After that, a 1 mm long ridge waveguide section is realized for lateral confinement, which is connected to a 2.5 mm long flared section having a full taper angle of 6◦. At an injection current of 8 A, a maximum output power of about 7 W is measured. At output powers up to 6 W, the measured emission width limited by the resolution of the spectrometer is smaller than 19 pm. Measured at 1/e2 level at this output power, the lateral beam waist width is 11.5 µm, the lateral far field angle 12.5◦, and the lateral beam parameter M2 2.5. The respective parameters measured using the second moments are 31 µm, 15.2◦, and 8.3. 70% of the emitted power is originated from the central lobe. © 2021 Optical Society of America
  • Item
    Diode-pumped continuous-wave laser operation of co-doped (Ho,Tm):KLu(WO4)2 monoclinic crystal
    (Amsterdam [u.a.] : Elsevier, 2013) Jambunathan, V.; Mateos, X.; Cinta Pujol, M.; Josep Carvajal, J.; Griebner, U.; Petrov, V.; Aguiló, M.; Díaz, F.
    We report on room-temperature continuous-wave laser operation at 2.06 μm in co-doped (0.5 at% Ho, 5.0 at% Tm):KLu(WO4)2 monoclinic crystal pumped at 805 nm by a commercially available AlGaAs diode laser stack. A maximum output power of 93 mW and a slope efficiency of 14.7% with respect to absorbed power were achieved.